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1
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85066679879
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International Technology Roadmap for Semiconductors
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International Technology Roadmap for Semiconductors, 2006 Edition, http://member.itrs.net.
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Edition
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2
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35148888547
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Unified Advanced Critical Dimension Scanning Electron Microscope (CD-SEM) Specification for sub-90 nm Technology (2006 Version). ISMI Tech Transfer document ID# 04114595C-ENG, Dec 2006. Non-confidential, available on SEMATECH website
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Bunday, B., Azordegan, A., Vladar, A., Singh, B., Banke, B., Hartig, C., Archie, C., Joy, D., Solecky, E., Cao, G., Villarrubia, J., and Postek, M. "Unified Advanced Critical Dimension Scanning Electron Microscope (CD-SEM) Specification for sub-90 nm Technology (2006 Version)." ISMI Tech Transfer document ID# 04114595C-ENG, Dec 2006. Non-confidential, available on SEMATECH website, http://www.sematecb.org.
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Bunday, B.1
Azordegan, A.2
Vladar, A.3
Singh, B.4
Banke, B.5
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Solecky, E.9
Cao, G.10
Villarrubia, J.11
Postek, M.12
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3
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0141835067
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Scatterometry Measurement Precision and Accuracy Below 70 nm
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M. Sendelbach and C. Archie, "Scatterometry Measurement Precision and Accuracy Below 70 nm," SPIE: Metrology, Inspection, and Process Controlfor Microlithography XVII (2003), v5035, pp 224-238, 2003.
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SPIE: Metrology, Inspection, and Process Controlfor Microlithography XVII
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Sendelbach, M.1
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Correlating Scatterometry to CD-SEM and Electrical Gate Measurements at the 90 nm Node Using TMU Analysis
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M. Sendelbach, C. Archie, and B. Banke, "Correlating Scatterometry to CD-SEM and Electrical Gate Measurements at the 90 nm Node Using TMU Analysis," SPIE: Metrology, Inspection, and Process Control for Microlithography XVIII (2004), v5375, pp 550-563, 2004.
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Banke, B.3
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5
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29244449878
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Improvement in Total Measurement Uncertainty for Gate CD Control
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to OM-12
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Bunday, B., Sorkhabi, O., Wen, Y., Paranjpe, A., Terbeek, P., Allgair, J., and Peterson, A. "Improvement in Total Measurement Uncertainty for Gate CD Control." Procedings of SPIE 2005, v5878, pp 0M-1 to OM-12.
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0036031274
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Quantitative Profile Shape Measurement Study on a CD-SEM with Application to Etch-Bias Control
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Bunday, B., Bishop, M., Bennett, M., Swyers, J., Haberman-Golan, Z. "Quantitative Profile Shape Measurement Study on a CD-SEM with Application to Etch-Bias Control." SPIE Microlithography Conference 2002, Proc. SPIE v4689, p. 138 2002.
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Quantitative Profile-Shape Measurement Study on a CD-SEM with Application to Etch-Bias Control and Several Different CMOS Features
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Bunday, B., Bishop, M., Swyers, J., Lensing, K.. "Quantitative Profile-Shape Measurement Study on a CD-SEM with Application to Etch-Bias Control and Several Different CMOS Features." SPIE Microlithography Conference 2003, Proc. SPIE v5038, p. 383-395.
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9
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CD-SEM Metrology Macro CD Technology-Beyond the Average
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Bunday, B., Michelson, D., Allgair, J., Tam, A., Chase-Colin, D., Dajczman, A., Adan, O., and Har-Zvi, M. "CD-SEM Metrology Macro CD Technology-Beyond the Average." Proceedings of SPIE 2005, v5752, pp 111-126.
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Journal of Micro/Nanolithography, MEMS and MOEMS
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R. G. Dixson, N.T. Sullivan, J. Schneir, T. H. McWaid, V. W. Tsai, J. Prochazka, M. Young, "Measurement of a CD and sidewall angle artifact with two-dimensional CD AFM metrology'' Proc. SPIE Vol. 2725, p. 572-588 (1996)
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Modeling for profile-based process-window metrology
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T. A. Brunner and C. P. Ausschnitt, Process monitor gratings, Proceedings of the SPIE: Metrology, Inspection, and Process Control for Microlithography 2007, 6518-02, this conference.
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T. A. Brunner and C. P. Ausschnitt, "Process monitor gratings," Proceedings of the SPIE: Metrology, Inspection, and Process Control for Microlithography 2007, 6518-02, this conference.
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4344600954
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Dimensional metrology of resist lines using a SEM model-based library approach
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J. S. Villarrubia, A. E. Vladar, B. D. Bunday, and M. Bishop "Dimensional metrology of resist lines using a SEM model-based library approach" Proc. SPIE 5375, 199 (2004)
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Villarrubia, J.S.1
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