Forbidden pitch improvement using modified illumination in lithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 85-91

  Ling, M L ^a   Tay, C J ^a   Quan, C ^a   Chua, G S ^a   Lin, Q ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOLITHOGRAPHY;

ANNULAR ILLUMINATIONS; CRITICAL DIMENSIONS; DEPTH OF FOCUS; DIFFRACTED LIGHTS; FORBIDDEN PITCHES; ILLUMINATION SOURCES; IMAGE CONTRASTS; LIGHT FIELDS; LINE-AND-SPACE PATTERNS; MODIFIED ILLUMINATIONS; OFF-AXIS ILLUMINATIONS; PATTERN DENSITIES; PROCESS WINDOWS;

DEGRADATION;

EID: 59949103571     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3054286     Document Type: Article

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