Atomic precision lithography on Si

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 6, 2009, Pages 2764-2768

  Randall, J N ^a   Lyding, J W ^b   Schmucker, S ^b   Von Ehr, J R ^a   Ballard, J ^a   Saini, R ^a   Xu, H ^c   Ding, Y ^c  

^a Zyvex Labs   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c Zyvex Asia Pte Ltd   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PRECISION; BIOINTERFACES; DEPASSIVATION; E-BEAM LITHOGRAPHY; ELECTRON STIMULATED DESORPTION; ETCH MASK; LITHOGRAPHIC TECHNOLOGIES; OPTICAL ELEMENTS; OTHER APPLICATIONS; PASSIVATED SURFACE; PATTERNING PROCESS; SAMPLE PREPARATION; SCANNING TUNNELING MICROSCOPES; SELECTIVE DEPOSITION; SEMICONDUCTOR INDUSTRY; SILICON (100); SUBNANOMETERS;

CRYSTAL GROWTH; DESORPTION; HYDROGEN BONDS; LITHOGRAPHY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM DOTS;

ATOMS;

EID: 72849140981     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3237096     Document Type: Conference Paper

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