Scanning tunneling microscopy studies during semiconductor growth

Micron

Volumn 30, Issue 1, 1999, Pages 33-39

  Voigtländer, Bert ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Germanium; Molecular beam epitaxy (MBE); Scanning tunneling microscopy (STM); Semiconductor; Silicon; Thin films

Indexed keywords

EID: 0345561642     PISSN: 09684328     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0968-4328(98)00043-2     Document Type: Article

References (20)

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