Gas-source growth of group IV semiconductors: III. Nucleation and growth of Ge/Si(001)

Surface Science

Volumn 394, Issue 1-3, 1997, Pages 105-118

  Goldfarb, I ^a   Owen, J H G ^a   Hayden, P T ^a   Bowler, D R ^a   Miki, K ^a   Briggs, G A D ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

Epitaxy; Germanium; Growth; Scanning tunnelling microscopy; Silicon; Surface roughening

Indexed keywords

COMPOSITION EFFECTS; DIFFUSION IN SOLIDS; MOLECULAR BEAM EPITAXY; NUCLEATION; PHASE TRANSITIONS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SILANES; SURFACE ACTIVE AGENTS; SURFACE ROUGHNESS; WETTING;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE);

SEMICONDUCTING GERMANIUM;

EID: 0031337611     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00634-1     Document Type: Article

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