Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures

Journal of Applied Physics

Volumn 81, Issue 1, 1997, Pages 211-219

  Kamins, T I ^a   Carr, E C ^a   Williams, R S ^a   Rosner, S J ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000533566     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364084     Document Type: Article

References (29)

1. M. Krishnamurthy, J. S. Drucker, and J. A. Venables, J. Appl. Phys. 69, 6461 (1991).
2. Y.-W. Mo, D. E. Savage, B. S. Swartzentruber, and M. G. Lagally, Phys. Rev. Lett. 65, 1020 (1990).
3. P. Schittenhelm, M. Gail, J. Brunner, J. F. Nützel, and G. Abstreiter, Appl. Phys. Lett. 67, 1292 (1995).
4. P. Schittenhelm, M. Gail, and G. Abstreiter, J. Cryst. Growth 157, 260 (1995).
5. H. Sunamura, N. Usami, Y. Shiraki, and S. Fukatsu, Appl. Phys. Lett. 66, 3024 (1995).
6. H. Sunamura, S. Fukatsu, N. Usami, and Y. Shiraki, J. Cryst. Growth 157, 265 (1995).
7. B. Cunningham, J. O. Chu, and S. Akbar, Appl. Phys. Lett. 59, 3574 (1991).
8. A. Hartmann, L. Vescan, C. Dieker, and H. Lüth, Mater. Sci. Technol. 11, 410 (1995).
9. P. O. Hansson, M. Albrecht, W. Dorsch, H. P. Strunk, and E. Bauser, Phys. Rev. Lett. 73, 444 (1994).
10. J. Wintterlin and Ph. Avouris, J. Chem. Phys. 100, 687 (1994).
11. K. Sumitomo, T. Nishioka, N. Shimizu, Y. Shinoda, and T. Ogino, J. Vac. Sci. Technol. A 13, 289 (1995).
12. K. Sumitomo, T. Nishioka, and T. Ogino, J. Vac. Sci. Technol. B 13, 387 (1995).
13. A. Sakai and T. Tatsumi, Appl. Phys. Lett. 64, 52 (1994).
14. D. Leonard, K. Pond, and P. M. Petroff, Phys. Rev. B 50, 11687 (1994).
15. N. P. Kobayashi, T. R. Ramachandran, P. Chen, and A. Madhukar, Appl. Phys. Lett. 68, 3299 (1996).
16. M. Tomitori, K. Watanabe, M. Kobayashi, and O. Nishikawa, Appl. Surf. Sci. 76/77, 322 (1994).
17. J. A. Venables, J. Vac. Sci. Technol. B 4, 870 (1986).
18. J. W. Matthews, S. Mader, and T. B. Light, J. Appl. Phys. 41, 3800 (1970).
19. M. C. Öztürk, D. T. Grider, J. J. Wortman, M. A. Littlejohn, Y. Zhong, D. Batchelor, and P. Russell, J. Electron. Mater. 19, 1129 (1990).
20. M. L. Green, Y. S. Ali, D. Brasen, and S. Nakahara, J. Electron. Mater. 17, 229 (1988).
21. D. A. Grützmacher, T. O. Sedgwick, A. Powell, M. Tejwani, S. S. Iyer, J. Cotte, and F. Cardone, Appl. Phys. Lett. 63, 2531 (1993).
22. J. E. Vasek, Z. Zhang, C. T. Salling, and M. G. Lagally, Phys. Rev. B 51, 17207 (1995).
23. F. K. LeGoues, M. C. Reuter, J. Tersoff, M. Hammar, and R. M. Tromp, Phys. Rev. Lett. 73, 300 (1994).
24. G. L. McVay and A. R. DuCharme, J. Appl. Phys. 44, 1409 (1973).
25. S. J. Chang, V. Arbet, K. L. Wang, R. C. Bowman, Jr., P. M. Adams, D. Nayak, and J. C. S. Woo, J. Electron. Mater. 19, 125 (1990).
26. J.-M. Baribeau, R. Pascual, and S. Saimoto, Appl. Phys. Lett. 57, 1502 (1990).
27. P. Schittenhelm, private communication.
28. S. Zaima and Y. Yasuda, J. Cryst. Growth 163, 105 (1996).
29. J. Gregory and E. E. Crisman, in Integrated Circuits: Chemical and Physical Processing, edited by P. Stroeve (American Chemical Society, Washington, DC, 1985), p. 178 (esp. Sec. 2.1).