Dynamical STM studies of the growth of silicon and germanium on silicon

Zeitschrift fur Physikalische Chemie

Volumn 198, Issue 1-2, 1997, Pages 189-203

  Voigtlander B ^a   Bonzel, H P ^a   Ibach, H ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GERMANIUM;

ANTIPHASE DOMAIN BOUNDARY; GERMANIUM ON SILICONS; GROWTH PROCESS; HIGH GROWTH; HOMO EPITAXIES; LAYER-BY-LAYER GROWTH; SI (1 1 1); TRANSIENT GROWTH;

SILICON;

EID: 0342515604     PISSN: 09429352     EISSN: None     Source Type: Journal    
DOI: 10.1524/zpch.1997.198.part_1_2.189     Document Type: Article

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