Surface processes and phase diagrams in MBE growth of Si/Ge heterostuctures

Thin Solid Films

Volumn 306, Issue 2, 1997, Pages 299-306

  Pchelyakov, O P ^a   Markov, V A ^a   Nikiforov, A I ^a   Sokolov, L V ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Molecular beam epitaxy of Si1 xGex Si Heterostructures; Selforganization in heteroepitaxy on the Si (111)7 7 surface

Indexed keywords

COMPOSITION EFFECTS; ELECTRONIC PROPERTIES; FILM GROWTH; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHASE DIAGRAMS; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE; THERMAL EFFECTS;

FRANK VAN DER MERWE THEORY; STRANSKI KRASTANOV GROWTH;

HETEROJUNCTIONS;

EID: 0031224093     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00287-3     Document Type: Article

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