Growth processes in Si/Si(111) epitaxy observed by scanning tunneling microscopy during epitaxy

Physical Review Letters

Volumn 77, Issue 18, 1996, Pages 3861-3864

  Voigtländer, Bert ^a   Weber, Thomas ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038464254     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.77.3861     Document Type: Article

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