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Volumn 570, Issue , 1999, Pages 205-211
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Morphological transition of Ge islands on Si(001) grown by LPCVD
a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
DENSITY (SPECIFIC GRAVITY);
GERMANIUM;
LIQUID PHASE EPITAXY;
MORPHOLOGY;
OPTICAL VARIABLES MEASUREMENT;
PHASE TRANSITIONS;
PHOTOLUMINESCENCE;
COARSENING;
HUT CLUSTER DENSITY;
INTEGRATED PHOTOLUMINESCENCE INTENSITY;
SHAPE TRANSITION;
SEMICONDUCTING SILICON;
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EID: 0033354028
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-570-205 Document Type: Conference Paper |
Times cited : (9)
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References (15)
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