Strain-induced formation and tuning of ordered nanostructures on crystal surfaces

Surface Science

Volumn 352-354, Issue , 1996, Pages 117-122

  Shchukin, V A ^a,b   Ledentsov, N N ^a,b   Grundmann, M ^b   Kop'ev, P S ^a   Bimberg, D ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

Faceting; Gallium arsenide; Indium arsenide; Self assembly; Surface energy; Surface stress

Indexed keywords

CALCULATIONS; CRYSTAL LATTICES; INTERFACIAL ENERGY; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRESSES; SURFACES;

COHERENT STRAINED ISLANDS; ELASTIC RELAXATION ENERGY; FACETING; INDIUM ARSENIDE; RENORMALIZATION; SELF ASSEMBLY;

NANOSTRUCTURED MATERIALS;

EID: 0030148661     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01112-9     Document Type: Article

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