Thermal decay of silicon islands and craters on silicon surfaces by scanning tunneling microscopy

Surface Science

Volumn 357-358, Issue , 1996, Pages 840-843

  Tanaka, Yoriko ^a   Ishiyama, Kengo ^b   Ichimiya, Ayahiko ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b Rd Management Section   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; ELECTROLYTIC POLISHING; ELECTRON ENERGY LEVELS; PYROLYSIS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON;

CRATERS; FILLING UP PROCESSES; ISLANDS; SCHWOEBEL EFFECT; VAPOR PHASE PROCESSES;

SURFACE STRUCTURE;

EID: 0030173869     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00274-9     Document Type: Article

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