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Journal of Crystal Growth

Volumn 198-199, Issue pt 2, 1999, Pages 1032-1038

Effect of mismatch strain on Stranski-Krastanow transition in epitaxial GexSi1-x/Si(0 0 1) gas-source growth

(2) Goldfarb, I a Briggs, G A D a

a UNIVERSITY OF OXFORD (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

FILMS; GERMANIUM ALLOYS; MORPHOLOGY; PHASE TRANSITIONS; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SILICON ALLOYS; STRAIN; SURFACES;

CLUSTER SIZE; EPILAYER; FACETING; HETEROEPITAXY; IN SITU SCANNING TUNNELING MICROSCOPY; LAYER MOUNDING; MISMATCH STRAIN; STRAIN RELAXATION; STRAINED LAYER GROWTH; STRANSKI-KRASTANOW TRANSITION;

EPITAXIAL GROWTH;

EID: 0033514578 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00979-8 Document Type: Article

Times cited : (10)

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