Origin of rippled structures formed during growth of Si on Si(001) with MBE

Surface Science

Volumn 352-354, Issue , 1996, Pages 641-645

  Van Wingerden, J ^a   Van Halen, E C ^a   Werner, K ^a   Scholte, P M L O ^a   Tuinstra, F ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Atomic force microscopy; Epitaxy; Faceting; Growth; Models of surface kinetics; Molecular beam epitaxy; Non equilibrium thermodynamics and statistical mechanics; Silicon; Single crystal epitaxy; Stepped single crystal surfaces; Surface structure, morphology

Indexed keywords

ATOMIC FORCE MICROSCOPY; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTICAL MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; STATISTICAL MECHANICS; SURFACE ROUGHNESS; THERMODYNAMICS; X RAY CRYSTALLOGRAPHY;

FACETING; KINK BUNCHING; MICROSCOPIC MECHANISM YIELDING DEVIATIONS; NON EQUILIBRIUM THERMODYNAMICS; RIPPLED STRUCTURE; SINGLE CRYSTAL EPITAXY; STEPPED SINGLE CRYSTAL SURFACES; SURFACE KINETICS; TOPOGRAPHY;

SURFACE STRUCTURE;

EID: 0030141694     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01219-2     Document Type: Article

References (6)

1. A.J. Pidduck, D.J. Robbins, I.M. Young and G. Patel, Thin Solid Films 183 (1989) 255.
2. J. van Wingerden, Y.A. Wiechers, P.M.L.O. Scholte and F. Tuinstra, Surf. Sci. 331-333 (1995) 473.
3. D.J. Chadi, Phys. Rev. Lett. 59 (1987) 1691.
4. G. Brocks, P.J. Kelly and R. Car, Phys. Rev. Lett. 66 (1991) 1729.
5. D. Dijkkamp, E.J. van Loenen and H.B. Elswijk, Proc. 3rd NEC Symp. on Fundamental Approach to New Material Phases, Vol. 17, Springer Ser. Mater. Sci. (Springer, Berlin, 1992) p. 85.
6. G.S. Bales and A. Zangwill, Phys. Rev. B 41 (1990) 5500.