Dynamic observation of Si-island growth on a Si(111)-7 X 7 surface by high-temperature scanning tunneling microscopy

Journal of Crystal Growth

Volumn 166, Issue 1-4, 1996, Pages 314-318

  Hasegawa, Tsuyoshi ^a   Shimada, Wataru ^b   Tochihara, Hiroshi ^b   Hosoki, Shigeyuki ^a  

^a HITACHI LTD   (Japan)

^b HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; COMPOSITION EFFECTS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; CRYSTALLIZATION; EPITAXIAL GROWTH; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; STACKING FAULTS; SUBSTRATES; SURFACE PHENOMENA;

AMORPHOUS CLUSTERS; ISLAND GROWTH;

SEMICONDUCTOR GROWTH;

EID: 0030231226     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00492-0     Document Type: Article

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