Gas-source growth of group IV semiconductors: II. Growth regimes and the effect of hydrogen

Surface Science

Volumn 394, Issue 1-3, 1997, Pages 91-104

  Owen, J H G ^a,b   Miki, K ^a   Bowler, D R ^a   Goringe, C M ^a   Goldfarb, I ^a   Briggs, G A D ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Chemical vapour deposition; Density functional calculations; Disilane; Scanning tunnelling microscopy; Silicon; Single crystal epitaxy; Surface structure

Indexed keywords

ADSORPTION; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; HYDROGEN; MOLECULAR BEAM EPITAXY; NUCLEATION; SATURATION (MATERIALS COMPOSITION); SCANNING TUNNELING MICROSCOPY; SILANES; SINGLE CRYSTALS; SURFACE STRUCTURE;

DENSITY FUNCTIONAL THEORY;

SEMICONDUCTING SILICON;

EID: 0031373105     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00591-8     Document Type: Article

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