Metastable structures in the initial stages of Si homoepitaxy

Surface Review and Letters

Volumn 5, Issue 5, 1998, Pages 1053-1056

  Borovsky, Brian ^a   Krueger, Michael ^a   Ganz, Eric ^a  

^a University of Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032354599     PISSN: 0218625X     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0218625X98001420     Document Type: Article

References (13)

1. T. Yamasaki, T. Uda and K. Terakura, Phys. Rev. Lett. 76, 2949 (1996).
2. P. J. Bedrossian, Phys. Rev. Lett. 74, 3648 (1995).
3. A. van Dam, J. van Wingerden, M. J. Haye, P. M. L. O. Scholte and F. Tuinstra, Phys. Rev. B54, 1557 (1996).
4. J. van Wingerden, A. van Dam, M. J. Haye, P. M. L. O. Scholte and F. Tuinstra, Phys. Rev. B55, 4723 (1997).
5. G. Brocks and P. J. Kelly, Phys. Rev. Lett. 76, 2362 (1996).
6. Y. W. Mo et al., Phys. Rev. Lett. 66, 1998 (1991).
7. J. D. Chadi, Phys. Rev. Lett. 59, 1691 (1987).
8. G. Pearson, M. Krueger and E. Ganz, Phys. Rev. Lett. 76, 2306 (1996).
9. J. van Wingerden, A. van Dam, M. J. Haye, P. M. L. O. Scholte and F. Tuinstra, "Atomic details of step flow growth," preprint.
10. Z. Zhang, F. Wu, H. J. W. Zandvliet, B. Poelsema, H. Metiu and M. G. Lagally, Phys. Rev. Lett. 74, 3644 (1995).
11. B. Borovsky, M. Krueger and E. Ganz, "The diffusion of the silicon dimer on Si(001): new possibilities at 450 K," to appear in Phys. Rev. Lett., 1997.
12. J. H. G. Owen, D. R. Bowler, C. M. Goringe, K. Miki and G. A. D. Briggs, "A proposed structure of the nucleus for gas-source epitaxial growth of silicon," preprint.
13. J. H. G. Owen, K. Miki, D. R. Bowler, C. M. Coringe, I. Goldfarb and G. A. D. Briggs, "Gas-source growth of group IV semiconductors 1: Si(001) nucleation mechanism," preprint.