In situ observation of gas-source molecular beam epitaxy of silicon and germanium on Si(001)

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1938-1943

  Goldfarb, I ^a   Owen, J H G ^a   Bowler, D R ^a   Goringe, C M ^a   Hayden, P T ^a   Miki, K ^a   Pettifor, D G ^a   Briggs, G A D ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC RESOLUTION; ATOMISTIC MODELING; DISILANES; ELEVATED TEMPERATURE; GAS-SOURCE; IN-SITU OBSERVATIONS; QUANTUM STRUCTURE; SELF-ASSEMBLED; SI(0 0 1); SURFACE HYDROGEN; ULTRAHIGH VACUUM SCANNING TUNNELING MICROSCOPIES;

CRYSTAL GROWTH; GERMANIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MONOLAYERS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SURFACE DEFECTS; VACUUM;

CRYSTAL ATOMIC STRUCTURE;

EID: 0001359313     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581200     Document Type: Article

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