Growth of semiconductor layers studied by spot profile analysing low energy electron diffraction - Part I

Zeitschrift fur Kristallographie - New Crystal Structures

Volumn 214, Issue 10, 1999, Pages 591-629

  Horn von Hoegen, M ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

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EID: 84995611121     PISSN: 14337266     EISSN: None     Source Type: Journal    
DOI: 10.1524/zkri.1999.214.10.591     Document Type: Article

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