Structural and optical properties of Si/Si1-xGex wires

Thin Solid Films

Volumn 369, Issue 1, 2000, Pages 409-413

  Zhuang, Y ^a   Schelling, C ^a   Stangl, J ^a   Penn, C ^a   Senz, S ^b   Schaffler F ^a   Roch, T ^a   Daniel, A ^a   Grenzer, J ^c   Pietsch, U ^c   Bauer, G ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^c UNIVERSITY OF POTSDAM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FINITE ELEMENT METHOD; HETEROJUNCTIONS; MASKS; MOLECULAR BEAM EPITAXY; MOLECULAR STRUCTURE; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN; STRESS CONCENTRATION;

GRAZING INCIDENCE DIFFRACTION ANALYSIS; HIGH RESOLUTION X RAY COPLANAR DIFFRACTION;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0034226611     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00902-0     Document Type: Article

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