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Volumn 336, Issue 1-2, 1998, Pages 130-136

Silicon quantum integrated circuits - An attempt to fabricate silicon-based quantum devices using CMOS fabrication techniques

(12) Paul, D J a Coonan, B b Redmond, G b O'Neill, B J b Crean, G M b Hollander B c Mantl, S c Zozoulenko, I d Berggren, K F d Lazzari, J L e Arnaud D'Avitaya, F e Derrien, J e

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

b UNIVERSITY COLLEGE CORK (Ireland)

c FORSCHUNGSZENTRUM JÜLICH (Germany)

d LINKÖPING UNIVERSITY (Sweden)

e CAMPUS DE LUMINY (France)

Author keywords

Complementary metal oxide semiconductor; Heterostructure field effect transistors; Quantum devices; SiGe

Indexed keywords

FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; INTEGRATED CIRCUIT MANUFACTURE; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

SILICON QUANTUM INTEGRATED CIRCUITS;

CMOS INTEGRATED CIRCUITS;

EID: 0032310809 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(98)01219-X Document Type: Article

Times cited : (16)

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