Atomic-level in situ real-space observation of Ga adatoms on GaAs(0 0 1)(2×4)-As surface during molecular beam epitaxy growth

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 118-123

  Tsukamoto, Shiro ^a   Koguchi, Nobuyuki ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR GROWTH; SURFACE PHENOMENA; SURFACE STRUCTURE;

ADATOMS; SURFACE RECONSTRUCTION;

SEMICONDUCTING GALLIUM;

EID: 0032650538     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01304-9     Document Type: Article

References (14)

1. Biegelsen D.K., Bringans R.D., Northrup J.E., Swartz L.E. Phys. Rev. B. 41:1990;5701.
2. Tanaka I., Ohkouchi S., Kato T., Osaka F. J. Vac. Sci. Technol. B. 9:1991;2277.
3. Orr B.G., Snyder C.W., Johnson M. Rev. Sci. Instrum. 62:1991;1400.
4. Tanimoto M., Osaka J., Takegami T., Hirono S., Kanisawa K. Ultramicroscopy. 42/44:1992;1275.
5. Zhou J., Xue Q., Chaya H., Hashizume T., Sakurai T. Appl. Phys. Lett. 64:1994;583.
6. Avery A.R., Dobbs H.T., Holmes D.M., Joyce B.A., Vvedensky D.D. Phys. Rev. Lett. 79:1997;3938.
7. Itoh M., Bell G.R., Avery A.R., Jones T.S., Joyce B.A., Vvedensky D.D. Phys. Rev. Lett. 81:1998;633.
8. Yamaguchi H., Horikoshi Y. Jpn. J. Appl. Phys. 28:1989;L1456.
9. Horikoshi Y., Yamaguchi H., Briones F., Kawashima M. J. Crystal Growth. 105:1990;326.
10. Yamaguchi H., Horikoshi Y. Jpn. J. Appl. Phys. 30:1991;802.
11. Hashizume T., Xue Q., Zhou J., Ichimiya A., Sakurai T. Phys. Rev. Lett. 73:1994;2208.
12. Avery A.R., Goringe C.M., Holmes D.M., Sudijono J.L., Jones T.S. Phys. Rev. Lett. 76:1996;3344.
13. Ito T., Shiraishi K. Jpn. J. Appl. Phys. 35:1996;L949.
14. Ito T., Shiraishi K. Jpn. J. Appl. Phys. 37:1998;4234.