Quantitative measurements of thermal relaxation of isolated silicon hillocks and craters on the Si(111)-(7×7) surface by scanning tunneling microscopy

Physical Review Letters

Volumn 76, Issue 25, 1996, Pages 4721-4724

  Ichimiya, Ayahiko ^a   Tanaka, Yoriko ^a   Ishiyama, Kengo ^a,b  

^a NAGOYA UNIVERSITY   (Japan)

^b Rd Management Section   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000824076     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.76.4721     Document Type: Article

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