Atomic structures of Si(111) surface during silicon epitaxial growth

Journal of Crystal Growth

Volumn 163, Issue 1-2, 1996, Pages 39-47

  Ichimiya, Ayahiko ^a   Nakahara, Hitoshi ^a   Tanaka, Yoriko ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; DEPOSITION; DISSOLUTION; EPITAXIAL GROWTH; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; STABILITY; STACKING FAULTS; SURFACE STRUCTURE;

DIMER ADATOM STACKING FAULT STRUCTURE; HILLOCKS; HOMOEPITAXIAL GROWTH; PYRAMIDAL CLUSTER TYPE STRUCTURE; ROCKING CURVES;

CRYSTAL ATOMIC STRUCTURE;

EID: 0030563591     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)01036-X     Document Type: Article

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