Decay process of a crater/hillock and step structure transformation

Surface Science

Volumn 409, Issue 2, 1998, Pages 160-170

  Natori, A ^a   Murayama, M ^a   Matsumoto, D ^a   Yasunaga, H ^a  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

Atomistic dynamics; Computer simulations; Models of surface kinetics; Silicon; Stepped single crystal surfaces; Surface diffusion; Surface structure, morphology, roughness, and topography

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; EVAPORATION; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; MONTE CARLO METHODS; MORPHOLOGY; REACTION KINETICS; SEMICONDUCTING SILICON; SURFACE ROUGHNESS; SURFACE STRUCTURE;

ATOMISTIC DYNAMICS; DECAY PROCESS; EQUILIBRIUM ADATOM CONCENTRATION; LATTICE GAS MODEL; STEP BUNCHING FORMATION; SURFACE DIFFUSION;

SURFACE PHENOMENA;

EID: 0032120386     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00162-9     Document Type: Article

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