"In vivo" STM studies of the growth of Germanium and Silicon on Silicon

Applied Physics A: Materials Science and Processing

Volumn 63, Issue 6, 1996, Pages 577-581

  Voigtlander B ^a   Kastner M ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

IMAGING TECHNIQUES; MOLECULAR BEAM EPITAXY; NUCLEATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

SILICON HOMOEPITAXY; TWO DIMENSIONAL STRANSKI KRASTANOV LAYER;

SEMICONDUCTOR GROWTH;

EID: 0030412291     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF01567213     Document Type: Article

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