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Applied Physics A: Materials Science and Processing

Volumn 66, Issue SUPPL. 1, 1998, Pages

STMstudy of the initial oxidation stage of Ge(100) 2×1

(2) Fukuda, T a Ogino, T a

a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BRIGHT SPOTS; DEFECT-FREE SURFACES; DIMER ATOMS; DIMER DEFECTS; GE(100); GE(100) SURFACE; IN-SITU OXIDATION; INITIAL OXIDATION; INITIAL STAGES; OXYGEN CHEMISORPTION;

CHEMISORPTION; GERMANIUM; OXIDATION; SCANNING TUNNELING MICROSCOPY;

OXYGEN;

EID: 0003853377 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s003390051276 Document Type: Article

Times cited : (11)

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