Nucleation behavior in molecular beam and chemical vapor deposition of silicon on Si(111)-(7x7)

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 14, Issue 2, 1996, Pages 312-318

  Andersohn, L ^a   Berke, Th ^a   Kohler U ^b   Voigtlander B ^c  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^b UNIVERSITY OF KIEL   (Germany)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CONDENSATION; HYDROGEN; MOLECULAR BEAM EPITAXY; NUMERICAL METHODS; SCANNING TUNNELING MICROSCOPY; SILANES; SILICON; SILICON WAFERS; SURFACES;

CLASSICAL RATE EQUATION; DISILANE; ISLAND DENSITY;

NUCLEATION;

EID: 0030109708     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.579894     Document Type: Article

References (21)

1. VLSI Technology, McGraw-Hill Series in Electrical Engineering, edited by S. M. Sze (McGraw-Hill, New York, 1988).
2. S. M. Mokler, W. K. Liu, N. Ohtani, and B. A. Joyce, Appl. Surf. Sci. 60/61, 92 (1992).
3. S. K. Kulkarni, S. M. Gates, B. A. Scott, and H. H. Sawin, Surf. Sci. 239, 13 (1990); S. K. Kulkarni, S. M. Gates, C. M. Greenlief, and H. H. Sawin, Surf. Sci. 239, 26 (1990); J. Vac. Sci. Technol. A 8, 2956 (1990).
4. S. K. Kulkarni, S. M. Gates, B. A. Scott, and H. H. Sawin, Surf. Sci. 239, 13 (1990); S. K. Kulkarni, S. M. Gates, C. M. Greenlief, and H. H. Sawin, Surf. Sci. 239, 26 (1990); J. Vac. Sci. Technol. A 8, 2956 (1990).
5. S. K. Kulkarni, S. M. Gates, B. A. Scott, and H. H. Sawin, Surf. Sci. 239, 13 (1990); S. K. Kulkarni, S. M. Gates, C. M. Greenlief, and H. H. Sawin, Surf. Sci. 239, 26 (1990); J. Vac. Sci. Technol. A 8, 2956 (1990).
6. U. Köhler, L. Andersohn, and B. Dahlheimer, Appl. Phys. A 57, 491 (1993).
7. J. A. Venables, G. D. T. Spiller, and M. Hanbücken, Rep. Prog. Phys. 47, 399 (1984).
8. J. A. Venables, Phys. Rev. B 36, 4153 (1987).
9. Y.-W. Mo, J. Kleiner, M. B. Webb, and M. G. Lagally, J. Vac. Sci. Technol. A 8, 210 (1990).
10. Y.-W. Mo, J. Kleiner, M. B. Webb, and M. G. Lagally, Surf. Sci. 268, 275 (1992).
11. B. Voigtländer and A. Zinner, Surf. Sci. Lett. 292, L775 (1993).
12. R. Imbihl, J. E. Demuth, S. M. Gates, and B. A. Scott, Phys. Rev. B 39, 5222 (1989).
13. U. Köhler, J. E. Demuth, and R. J. Hamers, J. Vac. Sci. Technol. A 7, 2860 (1989).
14. B. Voigtländer, A. Zinner, T. Weber, and H. P. Bonzel, Phys. Rev. B 51, 7583 (1995).
15. H. Nakahara and M. Ichikawa, Appl. Phys. Lett. 61, 1531 (1992).
16. From the time resolved STM data of island coarsening processes the activation energy to detach an atom from an island on Si( 111 ) is ≈1.7 eV (unpublished results).
17. R. J. Buss, P. Ho, W. G. Breiland, and M. E. Coltrin, J. Appl. Phys. 63, 2808 (1988).
18. S. M. Gates, Surf. Sci. 195, 307 (1988).
19. K. Werner, S. Butzke, S. Radelaar, and P. Balk, J. Cryst. Growth 136, 322 (1994).
20. T. Horie, Y. Takakuwa, T. Yamagushi, and N. Miyamoto, J. Cryst. Growth 136, 344 (1994).
21. The terminus adatom is used in two different ways. First, it means the deposited Si atoms that are mobile on the surface. Here, it means the topmost Si atoms of the DAS reconstruction.