SiH4 chemical vapor deposition on Si (111)-(7 × 7) studied by scanning tunneling microscopy

Surface Science

Volumn 385, Issue 1, 1997, Pages 123-145

  Fehrenbacher, M ^a   Rauscher, H ^a   Memmert, U ^a,b   Behm, R J ^a  

^a UNIVERSITY OF ULM   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Chemical vapour deposition; Epitaxy; Growth; Low index single crystal surfaces; Scanning tunneling microscopy; Silicon; Surface structure, morphology, roughness, and topography

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; DESORPTION; EPITAXIAL GROWTH; MORPHOLOGY; NUCLEATION; SCANNING TUNNELING MICROSCOPY; SILANES; SINGLE CRYSTALS; STACKING FAULTS; SURFACE ROUGHNESS;

ADATOMS; LOW INDEX SINGLE CRYSTALS; SURFACE TOPOGRAPHY;

SILICON;

EID: 0031211599     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00218-5     Document Type: Article

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