Normal-incidence infrared photoconductivity in Si p-i-n diode with embedded Ge self-assembled quantum dots

Applied Physics Letters

Volumn 75, Issue 10, 1999, Pages 1413-1415

  Yakimov, A I ^a   Dvurechenskii, A V ^a   Proskuryakov, Yu Yu ^a   Nikiforov, A I ^a   Pchelyakov, O P ^a   Teys, S A ^a   Gutakovskii, A K ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

INFRARED RADIATION; LIGHT ABSORPTION; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; PHOTOCONDUCTIVITY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS;

NORMAL-INCIDENCE INFRARED PHOTOCONDUCTIVITY; SELF-ASSEMBLED QUANTUM DOTS;

PHOTODIODES;

EID: 0032621416     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124710     Document Type: Article

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