Direct observation of electromigration of Si magic clusters on Si(111) surfaces

Physical Review Letters

Volumn 84, Issue 25, 2000, Pages 5792-5795

  Ho, Mon Shu ^a,b   Hwang, Ing Shouh ^a   Tsong, Tien T ^a  

^a INSTITUTE OF PHYSICS   (Taiwan)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MAGIC CLUSTER; THERMAL MIGRATION;

ANISOTROPY; CATHODES; CRYSTAL ATOMIC STRUCTURE; DIFFUSION; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC HEATING; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SURFACES;

ELECTROMIGRATION;

EID: 17544375329     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.84.5792     Document Type: Article

References (7)

1. H. B. Huntington, in Diffusion in Solids: Recent Development, edited by A. S. Norwick and J. J. Burton (Academic Press, New York, 1975), pp. 303-352.
2. P. S. Ho and T. Kwok, Rep. Prog. Phys. 52, 301 (1989).
3. B. H. Jo and R. W. Vook, Appl. Surf. Sci. 89, 237 (1995).
4. A. V. Latyshev, A. B. Krasilnikov, A. L. Aseev, and S. I. Stenin, JETP Lett. 48, 526 (1988).
5. A. V. Latyshev, A. L. Aseev, A. B. Krasilnikov, and S. I. Stenin, Surf. Sci. 213, 157 (1989).
6. S. Stoyanov, Jpn. J. Appl. Phys. 30, 1 (1991).
7. Y.-N. Yang, E. S. Fu, and E. D. William, Surf. Sci. 356, 101 (1996).