Gas-source growth of group IV semiconductors: I. Si(001) nucleation mechanisms

Surface Science

Volumn 394, Issue 1-3, 1997, Pages 79-90

  Owen, J H G ^a,b   Miki, K ^a   Bowler, D R ^a   Goringe, C M ^a   Goldfarb, I ^a   Briggs, G A D ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Chemical vapour deposition; Density functional calculations; Models of surface chemical reactions; Scanning tunneling microscopy; Silane; Silicon; Single crystal epitaxy; Surface structure

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; MATHEMATICAL MODELS; NUCLEATION; REACTION KINETICS; SCANNING TUNNELING MICROSCOPY; SILANES; SINGLE CRYSTALS; SURFACE STRUCTURE;

DENSITY FUNCTIONAL THEORY;

SEMICONDUCTING SILICON;

EID: 0031336899     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00592-X     Document Type: Article

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