Self-organized Quantum Dot Multilayer Structures

Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics

Volumn , Issue , 2008, Pages 1-61

  Springholz, Gunther ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

DISTRIBUTED POWER GENERATION; MULTILAYERS; NANOCRYSTALS;

CORRUGATED SURFACES; ELASTIC EXPANSION; ELASTIC STRAIN RELAXATION; INTERACTION MECHANISMS; LATERAL ORDERING; MATERIAL SYSTEMS; MULTILAYER STRUCTURES; SEMICONDUCTOR NANOSTRUCTURES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84940829242     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1016/B978-0-08-046325-4.00001-3     Document Type: Chapter

References (210)

1. Bimberg D., Grundmann M., Ledentsov N.N. Quantum Dot Heterostructures 1998, Wiley, Chichester.
2. Leonard D., Krishnamurty M., Reaves C.M., Denbaar S.P., Petroff P. [Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces]. Appl. Phys. Lett. 1993, 63:3203.
3. Moison J.M., Houzay F., Barthe F., Leprince L., Andre E., Vatel O. [Self-organized growth of regular nanometer-scale InAs dots on GaAs]. Appl. Phys. Lett. 1994, 64:196.
4. Shchukin V.A., Ledentsov N.N., Bimberg D. Epitaxy of Nanostructures 2004, Springer Verlag, Berlin, and V. A. Shchukin and D. Bimberg, [Spontaneous ordering of nanostructures on crystal surfaces], Rev. Mod. Phys. 71, 1125 (1999).
5. Srolovitz D.J. [On the stability of surfaces of stressed solids]. Acta Metall. 1989, 37:621.
6. Snyder C.W., Orr B.G., Kessler D., Sander L.M. [Effect of strain on surface morphology in highly strained InGaAs films]. Phys. Rev. Lett. 1991, 66:3032.
7. Eaglesham D.J., Cerullo M. [Dislocation-free Stranski-Krastanow growth of Ge on Si(100)]. Phys. Rev. Lett. 1990, 64:1943.
8. Gao H. [Stress concentration at slightly undulating surfaces]. J. Mech. Solids 1991, 39:443.
9. Ratsch C., Zangwill A. [Equilibrium theory of the Stranski-Krastanov epitaxial morpholow]. Surf. Sci. 1993, 293:123.
10. Tersoff J., LeGoues F.K. [Competing relaxation mechanisms in strained layers]. Phys. Rev. Lett. 1994, 72:3570.
11. Daruka I., Barabási A.-L. [Dislocation-free island formation in heteroepitaxial growth: a study at equilibrium]. Phys. Rev. Lett. 1997, 79:3708.
12. Marzin J.Y., Gerard J.M., Izrael A., Barrier D., Bastard G. [Photoluminescence of single InAs quantum dots obtained by self-organized growth on GaAs]. Phys. Rev. Lett. 1994, 73:716.
13. Leon R., Petroff P.M., Leonhard D., Fafard S. [Spatially resolved visible luminescence of self-assembled semiconductor quantum dots]. Science 1995, 267:1966. and E. Dekel, D. Gershoni, E. Ehrenfreund, D. Spektor, J.M. Garcia, and P.M. Petroff, [Multiexciton spectroscopy of a single self-assembled quantum dot], Phys. Rev. Lett.80, 4991 (1998).
14. Zrenner A. [A close look on single quantum dots]. J. Chem. Phys. 2000, 112:7790.
15. Xie Q., Madhukar A., Chen P., Kobayashi N. [Vertically self-organized InAs quantum box islands on GaAs (100)]. Phys. Rev. Lett. 1995, 75:2542.
16. Solomon G.S., Trezza J.A., Marshall A.F., Harris J.S. [Vertically aligned and electronically coupled growth induced InAs islands in GaAs]. Phys. Rev. Lett. 1996, 76:952.
17. Tersoff J., Teichert C., Lagally M.G. [Self-organization in growth of quantum dot superlattices]. Phys. Rev. Lett. 1996, 76:1675.
18. Springholz G., Holy V., Pinczolits M., Bauer G. [Self-organized growth of threedimensional quantum-dot crystals with fcc-like stacking and a tunable lattice constant]. Science 1998, 282:734.
19. Springholz G., Pinczolits M., Holy V., Zerlauth S., Vavra I., Bauer G. [Vertical and lateral ordering in self-organized quantum dot superlattices]. Physica E 2001, 9:149.
20. Springholz G., Holy V., Mayer P., Pinczolits M., Raab A., Lechner R.T., Bauer G., Kang H., Salamanca-Riba L. [Self-organized ordering in self-assembled quantum dot superlattices]. Mat. Sci. Eng. B 2002, 88:143.
21. Teichert C. [Self-organisation of nanostructures in semiconductor heteroepytaxy]. Physics Reports 2002, 365:335.
22. Schmidt O.G., Eberl K. [Multiple layers of self-asssembled Ge/Si islands: photoluminescence, strain fields, material interdiffusion, and island formation]. Phys. Rev. B 2000, 61:13721.
23. Schmidt O.G., Eberl K., Rau A. [Strain and band-edge alignment in single and multiple layers of self-assembled Ge/Si and GeSi/Si islands]. Phys. Rev. B 2000, 62:16715.
24. Ortner G., Bayer M., Larionov A., Timofeev V.B., Forchel A., Lyanda-Geller Y.B., Reinecke T.L., Hawrylak P., Fafard S., Wasilewski Z. [Fine structure of excitons in InAs/GaAs coupled quantum dots: a sensitive test of electronic coupling]. Phys. Rev. Lett. 2003, 90:086404.
25. Shtrichman I., Metzner C., Gerardot B.D., Schoenfeld W.V., Petroff P.M. [Photoluminescence of a single InAs quantum dot molecule under applied electric field]. Phys. Rev. B 2002, 65:081303.
26. Bayer M., Hawrylak P., Hinzer K., Fafard S., Korkusinski M., Wasilewski Z.R., Stern O., Forchel A. [Coupling and entangling of quantum states in quantum dot molecules]. Science 2001, 291:451.
27. Petroff P.M., Lorke A., Imamoglu A. [Epitaxially self-assembled quantum dots]. Physics Today 2001, 54/4:46. and references therein.
28. Teichert C., Peticolas L.J., Bean J.C., Tersoff J., Lagally M.G. [Stress-induced self-organization of nanoscale structures in SiGe/Si multilayer films]. Phys. Rev. B 1996, 53:16334.
29. Liu F., Davenport S.E., Evans H.M., Lagally M.G. [Self-organized replication of 3D coherent island size and shape in multilayer heteroepitaxial films]. Phys. Rev. Lett. 1999, 82:2528.
30. Pinczolits M., Springholz G., Bauer G. [Evolution of hexagonal lateral ordering in strain-symmetrized PbSe/PbEuTe quantum-dot superlattices. ], Phys. Rev. B 1999, 60:11524.
31. Solomon G.S., Komarov S., Harris J.S., Yamamoto Y. [Increased size uniformity through vertical quantum dot columns]. J. Crys. Growth 1997, 175/176:707.
32. x Si quantum well structures]. Mat. Res. Soc. Symp. Proc. 1992, 263:23.
33. Schittenhelm P., Abstreiter G., Darhuber A., Bauer G., Werner P., Kosogov A. [Growth of self-assembled homogeneous SiGe-dots on Si (100)]. Thin Solid Films 1997, 294:291.
34. Schittenhelm P., Engel C., Findeis F., Abstreiter G., Darhuber A.A., Bauer G., Kosogov A.O., Werner P. [Self-assembled Ge dots: growth, characterization, ordering, and applications]. J. Vac. Sci. Technol. B 1998, 16:1575.
35. Kienzle O., Ernst F., Rühle M., Schmidt O.G., Eberl K. [Modified Stranski-Krastanov growth in stacked layers of self-assembled islands]. Appl. Phys. Lett. 1999, 74:269.
36. Stangl J., Roch T., Bauer G., Kegel I., Metzger T.H., Schmidt O.G., Eberl K., Kienzle O., Ernst F. [Vertical correlation of SiGe islands in SiGe/Si superlattices: X-ray diffraction versus transmission electron microscopy]. Appl. Phys. Lett. 1999, 77:3953.
37. Mateeva E., Sutter P., Bean J.C., Lagally M.G. [Mechanism of organization of three-dimensional islands in SiGe/Si multilayers]. Appl. Phys. Lett. 1997, 71:3233.
38. Darhuber A., Schittenhelm P., Holy V., Stangl J., Bauer G., Abstreiter G. [High-resolution x-ray diffraction from multilayered self-assembled Ge dots]. Phys. Rev. B 1997, 55:15652.
39. Schmidt O.G., Kienzle O., Hao Y., Eberl K., Ernst F. [Modified Stranski-Krastanov growth in stacked layers of self-assembled islands]. Appl. Phys. Lett. 1999, 74:1272.
40. Le Thanh V., Yam V., Boucaud P., Fortune F., Ulysse C., Bouchier D., Vervoort L., Lourtioz J.-M. [Vertically self-organized Ge/Si(001) quantum dots in multilayer structures]. Phys. Rev. B 1999, 60:5851. V. Le Thanh, V. Yam, L. H. Nguyen, Y. Zenhg, P. Boucaud, D. Debarre, and D. Bouchier, Vertical ordering in multilayers of self-assembled Ge/Si(001) quantum dots J. Vac. Sci. Technol. B 20, 1259 (2002).
41. Herbst M., Schramm C., Brunner K., Asperger T., Riedl H., Abstreiter G., Vörckel A., Kurz H., Müller E. [Structural and optical properties of vertically correlated Ge island layers grown at low temperatures]. Mat. Sci. Engineering B 2002, 89:5.
42. Goldstein L., Glas F., Marzin J.Y., Charasse M.N., Le Roux G. [Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices]. Appl. Phys. Lett. 1985, 47:1099.
43. 1-xAs on GaAs(100)]. Appl. Phys. Lett. 1990, 57:2110.
44. Darhuber A.A., Holy V., Stangl J., Bauer G., Krost A., Heinrichsdorff F., Grundmann M., Bimberg D., Ustinov V.M., Kopev P.S., Kosogov A.O., Werner P. [Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffraction]. Appl. Phys. Lett. 1997, 70:955.
45. Legrand B., Nys J.P., Grandidier B., Stievenard D., Lemaitre A., Gerard J.M., Thierry-Mieg V. [Quantum box size effect on vertical self-alignment studied using cross-sectional scanning tunneling microscopy]. Appl. Phys. Lett. 1999, 74:2608.
46. Strassburg M., Kutzer V., Pohl U.W., Hoffmann A., Broser I., Ledentsov N.N., Bimberg D., Rosenauer A., Fischer U., Gerthsen D., Krestnikov I.L., Maximov M.V., Kopev P.S., Alverov Zh.I. [Gain studies of (Cd, Zn) Se quantum islands in a ZnSe matrix]. Appl. Phys. Lett. 1998, 72:942.
47. Krestnikov L., Straßburg M., Caesar M., Hoffmann A., Pohl U.W., Bimberg D., Ledentsov N.N., Kop'ev P.S., Alferov Zh.I., Litvinov D., Rosenauer A., Gerthsen D. [Control of the electronic properties of CdSe submonolayer superlattices via vertical correlation of quantum dots]. Phys. Rev. B 1999, 60:8695.
48. Mackowski G., Karczewski T., Wojtowicz J., Kossut J., Kret S., Szczepanska A., Duczewski P., Prechtl G., Heiss W. [Structural and optical evidence of island correlation in CdTe/ZnTe superlattices]. Appl. Phys. Lett. 2001, 78:3884.
49. Springholz G., Pinczolits M., Holy V., Mayer P., Wiesauer K., Roch T., Bauer G. [Self-organized growth of three-dimensional IV-VI semiconductor quantum dot crystals with fcc-like vertical stacking and tunable lattice constant]. Surf. Sci. 2000, 454-456:657.
50. xTe quantum-dot superlattices]. Phys. Rev. Lett. 2000, 84:4669.
51. Raab A., Lechner R.T., Springholz G. [Self-organized lateral ordering for vertically aligned PbSe/PbEuTe quantum dot superlattices]. Appl. Phys. Lett. 2002, 80:1273.
52. Raab A., Springholz G., Lechner R.T., Vavra I., Kang H.H., Salamanca-Riba L. [Atomic force microscopy and transmission electron microscopy study of self-organized ordering in vertically aligned PbSe quantum dot superlattices]. Mat. Res. Soc. Symp. Proc. 2002, 696. N 7.2.1.
53. Holy V., Stangl J., Springholz G., Pinczolits M., Bauer G., Kegel I., Metzger T.H. [Lateral and vertical ordering of self-assembled PbSe quantum dots studied by high-resolution X-ray diffraction]. Physica B 2000, 283:65.
54. Kang H.H., Salamanca-Riba L., Pinczolits M., Springholz G., Holy V., Bauer G. [TEM investigation of self-organized PbSe quantum dots as a function of spacer layer thickness and growth temperature]. Mat. Sci. Eng. B 2001, 80:104.
55. Springholz G., Raab A., Lechner R.T., Holy V. [The dot size dependence of vertical and lateral ordering in self-organized PbSe/PbEuTe quantum dot superlattices]. Appl. Phys. Lett. 2003, 82:799.
56. Raab A., Springholz G., Lechner R.T. [The growth temperature and coverage dependence of vertical and lateral ordering in self-assembled PbSe quantum dot superlattices]. Phys. Rev. B 2003, 67:165321.
57. Lechner R.T., Schülli T., Holy V., Springholz G., Stangl J., Raab A., Metzger T.H., Bauer G. [Ordering parameters of self-organized 3D quantum dot lattices determined by anomalous x-ray diffraction]. Appl. Phys. Lett. 2004, 84:885.
58. Holy V., Springholz G., Pinczolits M., Bauer G. [Strain induced vertical and lateral correlations in quantum dot superlattices]. Phys. Rev. Lett. 1999, 83:356.
59. Shchukin V.A., Bimberg D., Malyshkin V.G., Ledentsov N.N. [Vertical correlations and anticorrelations in multisheet arrays of two-dimensional islands]. Phys. Rev. B 1998, 57:12262.
60. Li H., Wu J., Wang Z., Daniels-Race T. [High-density InAs nanowires realized in situ on (100) InP]. Appl. Phys. Lett. 1999, 75:1173.
61. Wu J., Zeng Y.P., Sun Z.Z., Lin F., Xu B., Wang Z.G. [Self-assembled InAs quantum wires on InP(001)]. J. Crys. Growth 2000, 21:1803.
62. Sun Z., Yoon S.F., Wu J., Wang Z. [Origin of the vertical-anticorrelation arrays of InAs/InAlAs nanowires with a fixed layer-ordering orientation]. J. Appl. Phys. 2004, 91:6021.
63. Sun Z.Z., Yoon S.F., Wu J., Wang Z.G. [Size self-scaling in stacked InAs/InAlAs nanowire multilayers]. Appl. Phys. Lett. 2004, 85:5061.
64. Brault J., Gendry M., Marty O., Pitaval M., Olivares J., Grenet G., Hollinger G. [Staggered vertical self-organization of stacked InAs/InAlAs quantum wires on InP(001)]. Appl. Surface Sci. 2000, 162-163:584.
65. Salem B., Brèmond G., Hjiri M., Hassen F., Maaref H., Marty O., Brault J., Gendry M. [Effect of spacer layer thickness on the optical properties of stacked InAs/InAlAs quantum wires grown on InP (001)]. Mat. Sci. Engineering B 2003, 101:259.
66. Priester C., Grenet G. [Role of alloy spacer layers in non top-on-top vertical correlation in multistacked systems]. Phys. Rev. B 2001, 64:125312.
67. Wu W., Tucker J.R., Solomon G.S., Harris J.S. [Atomically resolved STM of vertically ordered InAs quantum dots]. Appl. Phys. Lett. 1997, 71:1083.
68. Lita B., Goldman R.S., Phillips J.D., Bhattacharya P.K. [Nanometer-scale studies of vertical organization and evolution of stacked self-assembled InAs/GaAs quantum dots]. Appl. Phys. Lett. 1999, 74:2824.
69. Lita B., Goldman R.S., Phillips J.D., Bhattacharya P.K. [Interdiffusion and surface segregation in stacked self-assembled InAs/GaAs quantum dots]. Appl. Phys. Lett. 1999, 75:2797.
70. Eisele H., Flebbe O., Kalka T., Preinesberger C., Heinrichsdorff F., Krost A., Bimberg D., Dähne-Prietsch M. [Cross-sectional scanning-tunneling microscopy of stacked InAs quantum dots]. Appl. Phys. Lett. 1999, 75:106.
71. Flebbe O., Eisele H., Kalka T., Heinrichsdorff F., Krost A., Bimberg D., Dähne-Prietsch M. [Atomic structure of stacked InAs quantum dots grown by metal-organic chemical vapor deposition]. J. Vac. Sci. Technol. B 1999, 17:1639.
72. Bruls D.M., Vugs J.W.A.M., Koenraad P.M., Hopkinson M., Skolnick M.S., Long F., Gill S.P.A. [Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy]. Appl. Phys. Lett. 2002, 81:1708.
73. Bruls D.M., Koenraad P.M., Salemink H.W.M., Wolter J.H., Hopkinson M., Skolnik M.S. [Stacked low-growth-rate InAs quantum dots studied at the atomic level by cross-sectional scanning tunneling microscopy]. Appl. Phys. Lett. 2003, 82:3758.
74. Solomon G.S., Komarov S., Harris Jr J.S. [Nearest-neighbor spatial ordering of strain-induced islands using a subsurface island superlattice]. J. Cryst. Growth 1999, 201-202:1190.
75. Nakata Y., Sugiyama Y., Fuatsugi T., Yokoyama N. [Self-assembled structures of closely stacked InAs islands grown on GaAs by molecular beam epitaxy]. J. Cryst. Growth 1997, 175/176:713.
76. Sutter P., Mateeva-Sutter E., Vescan L. [Oblique stacking of three-dimensional dome islands in Ge/Si multilayers]. Appl. Phys. Lett. 2001, 78:1736.
77. Zundel M.K., Specht P., Eberl K., Jin-Philipp N.Y., Philipp F. [Structural and optical properties of vertically aligned InP quantum dots]. Appl. Phys. Lett. 1997, 71:2972.
78. Gutierrez M., Hopkinsona M., Liua H.Y., Nga J.S., Herrera M., Gonzalez D., Garciab R., Beanland R. [Strain interactions and defect formation in stacked InGaAs quantum dot and dot-in-well structures]. Physica E 2005, 26:245-251.
79. Rouviere J.L., Simon J., Pelekanos N., Daudin B., Feullet G. [Preferential nucleation of GaN quantum dots at the edge of AlN threading dislocations]. Appl. Phys. Lett. 1999, 75:2632.
80. Hoshino K., Kako S., Arakawa Y. [Formation and optical properties of stacked GaN/AlN self-assembled quantum dots grown by metalorganic chemical vapor deposition]. Appl. Phys. Lett. 2004, 85:1262.
81. Gogneau N., Fossard F., Monroy E., Monnoye S., Mank H., Daudin B. [Effects of stacking on the structural and optical properties of self-organized GaN/AlN quantum dots]. Appl. Phys. Lett. 2004, 84:4224.
82. Chamard V., Metzger T.H., Bellet-Amalric E., Daudin B., Adelmann C., Mariette H., Mula G. [Structure and ordering of GaN quantum dot multilayers]. Appl. Phys. Lett. 2001, 79:1971.
83. Chamard V., Schülli T., Sztucki M., Metzger T.H., Sarigiannidou E., Rouvière J.L., Tolan M., Adelmann C., Daudin B. [Strain distribution in nitride quantum dot multilayers]. Phys. Rev. B 2004, 69:125327.
84. Sarigiannidou E., Monroy E., Daudin B., Rouvière J.L., Andreev A.D. [Strain distribution in GaN/AlN quantum-dot superlattices]. Appl. Phys. Lett. 2005, 87:203112.
85. Founta S., Rol F., Bellet-Amalric E., Sarigiannidou E., Gayral B., Moisson C., Mariette H., Daudin B. [Growth of GaN quantum dots on nonpolar A-plane SiC by molecular-beam epitaxy]. Phys. Stat. Sol. (b) 2006, 243:3968.
86. Guillot F., Bellet-Amalric E., Monroy E., Tchernycheva M., Nevou L., Doyennette L., Julien F.H., Dang L.S., Remmele T., Albrecht M., Shibata T., Tanaka M. [Si-doped GaN/AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths]. J. Appl. Phys. 2006, 100:044326.
87. Wang X.-D., Liu N., Shih C.K., Govindaraju S., Holmes Jr A.L. [Spatial correlation-anticorrelation in strain-driven self-assembled InGaAs quantum dots]. Appl. Phys. Lett. 2004, 85:1356.
88. Gutiérrez M., Herrera M., González D., García R., Hopkinson M. [Role of elastic anisotropy in the vertical alignment of In(Ga)As quantum dot superlattices]. Appl. Phys. Lett. 2006, 88:193118.
89. Maradudin A.A., Wallis R.F. [Elastic interactions of point defects in a semi-infinite medium]. Surf. Sci. 1980, 91:423.
90. Hu S.M. [Stress from a parallelepipedic thermal inclusion in a semispace]. J. Appl. Phys. 1989, 66:2741.
91. Krivoglaz M.A. X-Ray and Neutron Scattering in Nonideal Crystals 1996, Vol. I. Springer Verlag, Berlin.
92. Stangl J., Holy V., Bauer G. [Structural properties of self-organized semiconductor nanostructures]. Rev. Modern Physics 2004, 76:725.
93. Kunert R., Schöll E. [Strain-controlled correlation effects in self-assembled quantum dot stacks]. Appl. Phys. Lett. 2006, 89:153103.
94. Quek S.S., Liu G.R. [Effects of elastic anisotropy on the self-organized ordering of quantum dots]. Nanotechnology 2003, 14:752-764.
95. Pei Q.X., Lu C., Wang Y.Y. [Effect of elastic anisotropy on the elastic fields and vertical alignment of quantum dots]. J. Appl. Phys. 2003, 93:1487.
96. Romanov A.E., Beltz G.E., Fischer W.T., Petroff P.M., Speck J.S. [Elastic fields of quantum dots in subsurface layers]. J. Appl. Phys. 2001, 89:4523.
97. Liu P., Zhang Y.W., Lu C. [Three-dimensional finite-element simulations of the self-organized growth of quantum dot superlattices]. Phys. Rev. B 2003, 68:195314.
98. Benabbas T., Androussi Y., Lefebvre A. [A finite-element study of strain fields in vertically aligned InAs islands in GaAs]. J. Appl. Phys. 1999, 86:1945.
99. Priester C. [Modified two-dimensional to three-dimensional growth transition process in multistacked selforganized quantum dots]. Phys. Rev. B 2001, 63:153303.
100. Pryor C., Kim J., Wang L.W., Williamson A.J., Zunger A. [Comparison of two methods for describing the strain profiles in quantum dots]. J. Appl. Phys. 1998, 83:2548.
101. Makeev M.A., Madhukar A. [Simulations of atomic level stresses in systems of buried Ge/Si islands]. Phys. Rev. Lett. 2001, 86:5542. M.A. Makeev, W. Yu, and A. Madhukar, [Stress distributions and energetics in the laterally ordered systems of buried pyramidal Ge/Si (001) islands: an atomistic simulation study], Phys. Rev. B68, 195301 (2003).
102. Daruka I., Barabási A.-L., Zhou S.J., Germann T.C., Lomdahl P.S., Bishop A.R. [Molecular-dynamics investigation of the surface stress distribution in a Ge/Si quantum dot superlattice]. Phys. Rev. B 1999, 60:R2150.
103. Kikuchi Y., Sugii H., Shintani K. [Strain profiles in pyramidal quantum dots by means of atomistic simulation]. J. Appl. Phys. 2001, 89:1191.
104. Hanke M., Schmidbauer M., Köhler R., Syrowatka F., Gerlitzke A.-K., Boeck T. [Equilibrium shape of SiGe Stranski-Krastanow islands on silicon grown by liquid phase epitaxy]. Appl. Phys. Lett. 2004, 84:5228.
105. Temko Y., Suzuki T., Jacobi K. [Shape and growth of InAs quantum dots on GaAs (113)A]. Appl. Phys. Lett. 2003, 82:2142.
106. Zhu J.-H., Miesner C., Brunner K., Abstreiter G. [Strain relaxation of faceted Ge islands on Si(113)]. Appl. Phys. Lett. 1999, 75:2395.
107. García J.M., Medeiros-Ribeiro G., Schmidt K., Ngo T., Feng J.L., Lorke A., Kotthaus J., Petroff P.M. [Intermixing and shape changes during the formation of InAs self-assembled quantum dots]. Appl. Phys. Lett. 1997, 71:2014.
108. Rastelli A., Kummer M., von Känel H. [Reversible shape evolution of Ge islands on Si (001)]. Phys. Rev. Lett. 2001, 87:256101.
109. Rastelli A., Müller E., von Känel H. [Shape preservation of Ge/Si (001) islands during Si capping]. Appl. Phys. Lett. 2002, 80:1438.
110. Hesse A., Stangl J., Holy V., Roch T., Bauer G., Schmidt O.G., Denker U., Struth B. [Effect of overgrowth on shape, composition, and strain of SiGe islands on Si (001)]. Phys. Rev. B 2002, 66:085321.
111. 0.5As alloy quantum dots]. Phys. Rev. Lett. 2000, 84:334.
112. Abtin L., Springholz G., Holy V. Surface exchange and shape transitions of PbSe quantum dots during overgrowth. Phys. Rev. Lett. 2006, 97:266103.
113. Springholz G., Abtin L., Holy V. [Determination of shape and composition of buried PbSe quantum dots using scanning tunneling microscopy]. Appl. Phys. Lett. 2007, 90:113119.
114. Pei Q.X., Lu C., Wang Y.Y. [Effect of elastic anisotropy on the elastic fields and vertical alignment of quantum dots]. J. Appl. Phys. 2003, 93:1487.
115. Romanov A.E., Beltz G.E., Fischer W.T., Petroff P.M., Speck J.S. [Elastic fields of quantum dots in subsurface layers]. J. Appl. Phys. 2001, 89:4523.
116. Liu P., Zhang Y.W., Lu C. [Three-dimensional finite-element simulations of the self-organized growth of quantum dot superlattices]. Phys. Rev. B 2003, 68:195314.
117. Benabbas T., Androussi Y., Lefebvre A. [A finite-element study of strain fields in vertically aligned InAs islands in GaAs]. J. Appl. Phys. 1999, 86:1945.
118. Priester C. [Modified two-dimensional to three-dimensional growth transition process in multistacked selforganized quantum dots]. Phys. Rev. B 2001, 63:153303.
119. Pryor C., Kim J., Wang L.W., Williamson A.J., Zunger A. [Comparison of two methods for describing the strain profiles in quantum dots]. J. Appl. Phys. 1998, 83:2548.
120. Makeev M.A., Madhukar A. [Simulations of atomic level stresses in systems of buried Ge/Si islands]. Phys. Rev. Lett. 2001, 86:5542. M.A. Makeev, W. Yu, and A. Madhukar, [Stress distributions and energetics in the laterally ordered systems of buried pyramidal Ge/Si (001) islands: an atomistic simulation study], Phys. Rev. B68, 195301 (2003).
121. Daruka I., Barabási A.-L., Zhou S.J., Germann T.C., Lomdahl P.S., Bishop A.R. [Molecular-dynamics investigation of the surface stress distribution in a Ge/Si quantum dot superlattice]. Phys. Rev. B 1999, 60:R2150.
122. Kikuchi Y., Sugii H., Shintani K. [Strain profiles in pyramidal quantum dots by means of atomistic simulation]. J. Appl. Phys. 2001, 89:1191.
123. Jogai B. [Three-dimensional strain field calculations in multiple InN/AlN wurtzite quantum dots]. J. Appl. Phys. 2001, 90:699.
124. Mo Y.W., Savage D.E., Schwartzentruber B.S., Lagally M.G. [Kinetic pathway in Stranski-Krastanov growth of Ge on Si (001)]. Phys. Rev. Lett. 1990, 65:1020.
125. x films]. Surf. Sci. 1993, 316:L1075.
126. Medeiros-Ribeiro G., Bratkowski A.M., Kamins T.I., Ohlberg D.A.A., Williams R.S. [Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes]. Science 1998, 279:353.
127. Ross F.M., Tromp R.M., Reuter M.C. [Transition states between pyramids and domes during Ge/Si island growth]. Science 1999, 286:1931.
128. Marquez J., Geelhaar L., Jacobi K. Atomically resolved structure of InAs quantum dots Appl. Phys. Lett. 2001, 78:2309.
129. Costantini G., Manzano C., Songmuang R., Schmidt O.G., Kern K. [InAs/GaAs (001) quantum dots close to thermodynamic equilibrium]. Appl. Phys. Lett. 2003, 82:3194.
130. Pinczolits M., Springholz G., Bauer G. Appl. Phys. Lett. 1998, 73:250. M. Pinczolits, G. Springholz, and G. Bauer, [Molecular beam epitaxy of highly faceted self-assembled IV-VI quantum dots with bimodal size distribution], J. Crystal Growth201/202, 1126 (1999).
131. Yamaguchi H., Fahy M.R., Joyce B.A. [Inhibitions of three dimensional island formation in InAs films grown on GaAs (111) A surface by molecular beam epitaxy]. Appl. Phys. Lett. 1996, 69:776.
132. Nosho B.Z., Zepeda-Ruiz L.A., Pelzel R.I., Weinberg W.H., Maroudas D. [Surface morphology in InAs/GaAs(111)A heteroepitaxy: Experimental measurements and computer simulations]. Appl. Phys. Lett. 1999, 75:829.
133. Zepeda-Ruiz L.A., Pelzel R.I., Weinberg W.H., Maroudas D. [Interfacial stability and structure in InAs/GaAs(111)A heteroepitaxy: Effects of buffer layer thickness and film compositional grading]. Appl. Phys. Lett. 2000, 77:3352.
134. Springholz G., Wiesauer K. [Nanoscale dislocation patterning in PbTe/PbSe (001) lattice-mismatched heteroepitaxy]. Phys. Rev. Lett. 2002, 88:015507.
135. Wiesauer K., Springholz G. Appl. Phys. Lett. 2003.
136. Voigtländer B. [Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth]. Surf. Sci. Rep. 2001, 43:127.
137. Motta N. [Self-assembling and ordering of Ge/Si(111) quantum dots: scanning microscopy probe studies]. J. Phys.: Condens. Matter 2002, 14:8353-8378.
138. Li H., Daniels-Race T., Hasan M.-A. [Lateral correlation of InAs/AlInAs nanowire superlattices on InP (001)]. J. Vac. Sci. Technol. B 2001, 19:1471.
139. Li H., Daniels-Race T., Hasan M.-A. [Effects of the matrix on self-organization of InAs quantum nanostructures grown on InP substrates]. Appl. Phys. Lett. 2002, 80:1367.
140. Chauvina N., Salema B., Bremonda G., Bru-Chevalliera C., Guillota G., Monatb C., Regrenyb P., Gendry M., Lalmic B., Marty O. [Photoluminescence studies of stacked InAs/InP quantum sticks]. J. Crys. Growth 2005, 275:2327.
141. Heidemeyer H., Denker U., Müller C., Schmidt O.G. [Morphology response to strain field interferences in stacks of highly ordered quantum dot arrays]. Phys. Rev. Lett. 2003, 91:196103.
142. Schmidbauer M., Seydmohamadi Sh., Grigoriev D., Wang Zh.M., Mazur Yu.I., Schäfer P., Hanke M., Köhler R., Salamo G.J. [Controlling planar and vertical ordering in three-dimensional (In,Ga)As quantum dot lattices by GaAs surface orientation]. Phys. Rev. Lett. 2006, 96:066108.
143. Grigoriev D., Schmidbauer M., Schäfer P., Besedin S., Mazur Yu.I., Wang Zh.M., Salamo G.J., Köhler R. [Three-dimensional self-ordering in an InGaAs/GaAs multilayered quantum dot structure investigated by x-ray diffuse scattering]. J. Phys. D 2005, 38:A154.
144. Wang Zh.M., Seydmohamadi Sh., Lee J.H., Salamo G.J. [Surface ordering of (In,Ga)As quantum dots controlled by GaAs substrate indexes]. Appl. Phys. Lett. 2004, 85:5031.
145. Lytvyn P.M., Strelchuk V.V., Kolomys O.F., Prokopenko I.V., Valakh M.Ya., Mazur Yu.I., Wang Zh.M., Salamo G.J., Hanke M. [Two-dimensional ordering of (In,Ga)As quantum dots in vertical multilayers grown on GaAs (100) and (n11)]. Appl. Phys. Lett. 2007, 91:173118.
146. Omi H., Ogino T. [Self-organization of Ge islands on high-index Si substrates]. Phys. Rev. B 1999, 59:7521.
147. Holy V., Stangl J., Zerlauth Z., Schäffler F., Bauer G., Darowski N., Lübbert D., Pietsch U. [Lateral arrangement of self-assembled quantum dots in an SiGe/Si superlattice]. J. Phys. D 1999, 32:A234.
148. Liu F., Davenport S.E., Evans H.M., Lagally M.G. [Self-organized replication of 3D coherent island size and shape in multilayer heteroepitaxial films]. Phys. Rev. Lett. 1998, 82:2528.
149. Lee C.S., Kahang B., Barabasi A.L. [Spatial ordering of stacked quantum dots]. Appl. Phys.Lett. 2001, 78:984.
150. Lam P.M., Tan S. [Kinetic Monte Carlo model of self-organized quantum dot superlattices]. Phys. Rev. B 2001, 64:035321.
151. Meixner M., Schöll E. [Kinetically enhanced correlation and anticorrelation effects in self-organized quantum dot stacks]. Phys. Rev. B 2003, 67:121202.
152. He J., Nötzel R., Offermans P., Koenraad P.M., Gong Q., Hamhuis G.J., Eijkemans T.J., Wolter J.H. [Formation of columnar (In,Ga)As quantum dots on GaAs (100)]. Appl. Phys. Lett. 2004, 85:2771.
153. Wang Z.M., Holmes K., Mazur Yu.I., Salamo G.J. [Fabrication of (In,Ga)As quantum-dot chains on GaAs(100)]. Appl. Phys. Lett. 2004, 84:1931. Z.M. Wang, Yu.I. Mazur, G.J. Salamo, P.M. Lytvin, V.V. Strelchuk, and M.Ya. Valakh, [Persistence of (In,Ga)As quantum-dot chains under index deviation from GaAs(100)], Appl. Phys. Lett.84, 4681 (2004).
154. Mazur Yu.I., Ma W.Q., Wang X., Wang Z.M., Salamo G.J., Xiao M., Mishima T.D., Johnson M.B. [InGaAs/GaAs three-dimensionally-ordered array of quantum dots]. Appl. Phys. Lett. 2003, 83:987.
155. Wang Zh.M., Churchill H., George C.E., Salamo G.J. [High anisotropy of lateral alignment in multilayered (In,Ga)As/GaAs(100) quantum dot structures]. J. Appl. Phys. 2004, 96:6908. Zh.M. Wang, Yu.I. Mazur, K. Holmes, and G.J. Salamo, [Control on self-organization of InGaAs/GaAs(100) quantum-dot chains], J. Vac. Sci. Technol. B23, 1732 (2005).
156. Wang Zh.M., Mazur Yu.I., Shultz J.L., Salamo G.J., Mishima T.D., Johnson M.B. [One-dimensional postwetting layer in InGaAs/GaAs(100) quantum-dot chains]. J. Appl. Phys. 2006, 99:033705.
157. Hussein M.L., Marega E., Salamo G. Symposia Prodeedings of the Materials Research Society 2007, Vol. 959. Materials Research Society, Pittsburgh, p. 17.
158. 0.55As quantum dots on GaAs (311)B substrate]. J. Crys. Growth 1999, 200:77.
159. van Lippen T., Nötzel R., Hamhuis G.J., Wolter J.H. [Self-organized lattice of ordered quantum dot molecules]. Appl. Phys. Lett. 2004, 85:118.
160. van Lippen T., Nötzel R., Wolter J.H. [Ordering of quantum dot molecules by self-organization]. J. Vac. Sci. Technol. B 2005, 23:1693. and [Ordered quantum dot molecules and single quantum dots formed by self-organized anisotropic strain engineering], J. Appl. Phys.97, 044301 (2005).
161. Sugiyama Y., Nakata Y., Futatsugi T., Sugawara M., Awano Y., Yokoyama N. [Narrow photoluminescence line width of closely stacked InAs self-assembled quantum dot structures]. Jpn. J. Appl. Phys. 1997, 36:L158.
162. Chu L., Arzberger M., Böhm G., Abstreiter G. [Influence of growth conditions on the photoluminescenece of self-assembled InAs/GaAs quantum dots]. J. Appl. Phys. 1999, 85:2355.
163. Celibert V., Tranvouez E., Guillot G., Bru-Chevallier C., Grenouillet L., Duvaut P., Gilet P., Ballet P., Million A. [MBE growth optimization and optical spectroscopy of InAs/GaAs quantum dots emitting at 1.3μm in single and stacked layers]. J. Crys. Growth 2005, 275:2313.
164. Wasilewski Z.R., Fafard S., McCaffrey J.P. [Size and shape engineering of vertically stacked self-assembled quantum dots]. J. Cryst. Growth 1999, 201-202:1131.
165. Fafard S., Spanner M., McCaffrey J.P., Wasilewski Z.R. [Coupled InAs/GaAs quantum dots with well-defined electronic shells]. Appl. Phys. Lett. 2000, 76:2268.
166. Fafard S., Wasilewski Z.R., Allen C.Ni., Picard D., Spanner M., McCaffrey J.P., Piva P.G. [Manipulating the energy levels of semiconductor quantum dots]. Phys. Rev. B 1999, 59:15368.
167. Nakaoka T., Tatebayashi J., Arakawa Y. [Spectroscopy on single columns of vertically aligned InAs quantum dots]. Physica E 2004, 21:409.
168. Ledentsov N.N., Kirstaedter N., Grundmann M., Bimberg D., Ustinov V.M., Kochnev I.V., Kop'ev P.S., Alferov Zh.I. [Three-dimensional arrays of self-ordered quantum dots for laser applications]. Microelectron. J. 1997, 28:915.
169. Ledentsov N.N., Ustinov V.M., Shchukin V.A., Kop'ev P.S., Alferov Zh.I., Bimberg D. [Quantum dot heterostructures: fabrication, properties, lasers (Review)]. Semiconductors 1998, 32:343.
170. Bimberg D., Grundmann M., Heinrichsdorff F., Ledentsov N.N., Ustinov V.M., Zhukov A.E., Kovsh A.R., Maximov M.V., Shernyakov Y.M., Volovik B.V., Tsatsul'nikov A.F., Kopev P.S., Alferov Zh.I. [Quantum dot lasers: breakthrough in optoelectronics]. Thin Solid Films 2000, 367:235.
171. Raab A., Springholz G. [Controlling the size and density of self-assembled PbSe quantum dots by adjusting the substrate temperature and layer thickness]. Appl. Phys. Lett. 2002, 81:2457.
172. Springholz G., Schwarzl T., Heiss W., Bauer G., Aigle M., Pascher H., Vavra I. [Mid-infrared surface-emitting PbSe/PbEuTe quantum dot lasers]. Appl. Phys. Lett. 2001, 79:1225.
173. Holy V., Stangl J., Springholz G., Pinczolits M., Bauer G., Kegel I., Metzger T.H. [Lateral and vertical ordering of self-assembled PbSe quantum dots studied by high-resolution X-ray diffraction]. Physica B 2000, 283:65.
174. Zhong Z., Halilovic A., Fromherz T., Schäffler F., Bauer G. [2D periodic positioning of self-assembled Ge islands on prepatterned Si (001) substrates]. Appl. Phys. Lett. 2003, 82:4779.
175. Zhong Z., Bauer G. Appl. Phys. Lett. 2004, 84:1922. Z. Zhong, A. Halilovic, M. Mühlberger, F. Schäffler, and G. Bauer, Ge island formation on stripe patterned Si (001) substrates Two-dimensional periodic positioning of self-assembled Ge islands on prepatterned Si (001) substrates, Appl. Phys. Lett. 82, 445 (2003); and J. Appl. Phys. 93, 6258 (2003).
176. Songmuang R., Kiravittaya S., Schmidt O.G. [Formation of lateral quantum dot molecules around self-assembled nanoholes]. Appl. Phys. Lett. 2003, 82:2892.
177. Nakamura Y., Schmidt O.G., Jin-Phillipp N.Y., Kiravittaya S., Müller C., Eberl K., Gräbeldinger H., Schweizer H. [Vertical alignment of laterally ordered InAs and InGaAs quantum dot arrays on patterned (001) GaAs substrates]. J. Crys. Growth 2002, 242:339.
178. Nakamura Y., Ikeda N., Ohkouchi S., Sugimoto Y., Nakamura H., Asakawa K. [Regular array of InGaAs quantum dots with 100-nm-periodicity formed on patterned GaAs substrates]. Physica E 2004, 21:551.
179. García J.M., Medeiros-Ribeiro G., Schmidt K., Ngo T., Feng J.L., Lorke A., Kotthaus J., Petroff P.M. [Intermixing and shape changes during the formation of InAs self-assembled quantum dots]. Appl. Phys. Lett. 1997, 71:2014.
180. Raz T., Ritter D., Bahir G. [Formation of InAs self-assembled quantum rings on InP]. Appl. Phys. Lett. 2003, 82:1706.
181. Schmidt O.G., Jin-Phillipp N.Y., Lange C., Denker U., Eberl K., Schreiner R., Gräbeldinger H., Schweizer H. [Long-range ordered lines of self-assembled Ge islands on a flat Si (001) surface]. Appl. Phys. Lett. 2000, 77:4139.
182. Mui D.S.L., Leonard D., Coldren L.A., Petroff P.M. [Surface migration induced self-aligned InAs islands grown by molecular beam epitaxy]. Appl. Phys. Lett. 1995, 66:1620.
183. Lee H., Johnson J.A., He M.Y., Speck J.S., Petroff P.M. [Strain-engineered self-assembled semiconductor quantum dot lattices (buried stressors)]. Appl. Phys. Lett. 2001, 78:105.
184. Williams R.L., Aers G.C., Poole P.J., Lefebvre J., Chithrani D., Lamontagne B. [Controlling the self-assembly of InAs/InP quantum dots]. J. Crys. Growth 2001, 223:321.
185. Kitajima T., Liu B., Leone S.R. [Two-dimensional periodic alignment of self-assembled Ge islands on patterned Si(001) surfaces]. Appl. Phys. Lett. 2002, 80:497.
186. Tevaarwerk E., Rugheimer P., Castellini O.M., Keppel D.G., Utley S.T., Savage D.E., Lagally M.G., Eriksson M.A. [Electrically isolated SiGe quantum dots on mesa structures]. Appl. Phys. Lett. 2002, 80:4626.
187. Fantini A., Phillipp F., Kohler C., Porsche J., Scholz F. [Investigation of self-assembled InP-GaInP quantum dot stacks by TEM]. J. Crys. Growth 2002, 244:129.
188. Gutierrez H.R., Cotta M.A., de Carvalho M.M.G. [Vertical stacks of InAs quantum wires in a InP matrix]. J. Crys. Growth 2003, 254:1.
189. Wang Z.G., Wu J. [Controllable growth of semiconductor nanometer structures]. Microelectron. J. 2003, 34:379.
190. Schelling C., Springholz G., Schäffler F. [Kinetic growth instabilities on vicinal Si (001) surfaces]. Phys. Rev. Lett. 1999, 83:995.
191. x growth instabilities on vicinal Si(001) substrates: kinetic vs. strain-induced effects],. Phys. Rev. B 2001, 64:041301.
192. Phang Y.H., Teichert C., Lagally M.G., Peticolos L.J., Bean J.C., Kasper E., Schelling C., Springholz G., Schäffler F. [Kinetic Growth Instabilities on Vicinal Si(001) Surfaces]. Phys. Rev. Lett. 1999, 83:995.
193. Tersoff J., Phang Y.H., Zhang Z., Lagally M.G. [Step-bunching instability of vicinal substrates under stress]. Phys. Rev. Lett. 1995, 75:2730.
194. Holy V., Darhuber A.A., Stangl J., Bauer G., Nützel J., Abstreiter G. [Oblique roughness replication in strained SiGe/Si multilayers]. Phys. Rev. B 1998, 57:12435.
195. Darhuber A.A., Zhu J., Holy V., Stangl J., Mikulik P., Brunner K., Abstreiter G., Bauer G. [Highly regular self-organization of step bunches during growth of SiGe on Si(113)]. Appl. Phys. Lett. 1998, 73:1535.
196. Hanke M., Schmidbauer M., Köhler R., Kirmse H., Pristovsek M. [Lateral short range ordering of step bunches in InGaAs/GaAs superlattices]. Appl. Phys. 2004, 95:1736.
197. Zhu J.-H., Brunner K., Abstreiter G. [Two-dimensional ordering of self-assembled Ge islands on vicinal Si(001) surfaces with regular ripples]. Appl. Phys. Lett. 1998, 73:620.
198. Brunner K., Zhu J., Miesner C., Abstreiter G., Kienzle O., Ernst F. [Self-organized periodic arrays of SiGe wires and Ge islands on vicinal Si substrates]. Physica E 2000, 7:881.
199. Stangl J., Roch T., Holy V., Pinczolits M., Springholz G., Bauer G., Kegel I., Metzger T.H., Zhu J., Brunner K., Abstreiter G., Smilgies D. [Strain-induced self-organized growth of nanostructures: from step bunching to ordering in quantum dot superlattices]. J. Vac. Sci. Technol. B 2000, 18:2187.
200. Mano T., Nötzel R., Zhou D., Hamhuis G.J., Eijkemans T.J., Wolter J.H. [Complex quantum dot arrays formed by combination of self-organized anisotropic strain engineering and step engineering on shallow patterned substrates]. J. Appl. Phys. 2005, 97:014304.
201. Fitting L., Ware M.E., Haywood J.R., Walter J.H., Nemanich R.J. [Self-organized nanoscale Ge dots and dashes on SiGe/Si superlattices]. J. Appl. Phys. 2005, 98:024317.
202. Horn-von-Hoegen M. [Surfactants: perfect heteroepitaxy of Ge on Si (111)]. Appl. Phys. A 1994, 59:503. and E. Tournie, N. Grandjean, A. Trampert, J. Massies, and K. Ploog, [Surfactant-mediated molecular-beam epitaxy of III-V strained-layer heterostructures], J. Cryst. Growth150, 460 (1995).
203. Zunger A., Mahajan S. Title. Handbook on Semiconductors 1994, Vol. 3:1399. Elsevier Science, Amsterdam. T.S. Moss, S. Mahajan (Eds.).
204. Priester C., Grenet G. [Surface roughness and alloy stability interdependence in lattice-matched and lattice-mismatched heteroepitaxy]. Phys. Rev. B 2000, 61:91602.
205. Guyer J.E., Voorhees P.W. [Morphological stability of alloy thin films]. Phys. Rev. Lett. 1995, 74:4031. and Morphological stability of alloy thin films Phys. Rev. B 54, 11710 (1996).
206. Tersoff J. [Stress-driven alloy decomposition during step-flow growth]. Phys. Rev. Lett. 1996, 77:2017.
207. Spencer B.J., Voorhees P.W., Tersoff J. [Enhanced instability of strained alloy films due to compositional stresses]. Phys. Rev. Lett. 2000, 84:2449.
208. Maximov M.V., Tsatsul'nikov A.F., Volovik B.V., Sizov D.S., Shernyakov Yu.M., Kaiander I.N., Zhukov A.E., Kovsh A.R., Mikhrin S.S., Ustinov V.M., Alferov Zh.I., Heitz R., Shchukin V.A., Ledentsov N.N., Bimberg D., Musikhin Yu.G., Neumann W. [Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors]. Phys. Rev. B 2000, 62:16671.
209. Fuster D., Ujué González M., González L., González Y., Ben T., Ponce A., Molina S.I. [Stacking of InAs/InP (001) quantum wires studied by in situ stress measurements: role of inhomogeneous stress fields]. Appl. Phys. Lett. 2004, 84:4723.
210. Wang Z.G., Wu J. [Controllable growth of semiconductor nanometer structures]. Microelectron. J. 2003, 34:379.