Complex quantum dot arrays formed by combination of self-organized anisotropic strain engineering and step engineering on shallow patterned substrates

Journal of Applied Physics

Volumn 97, Issue 1, 2005, Pages

  Mano, T ^a,b   Notzel R ^a   Zhou, D ^a   Hamhuis, G J ^a   Eijkemans, T J ^a   Wolter, J H ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADATOM MIGRATION; ANISOTROPIC STRAIN ENGINEERING; COMPLEX QUANTUM DOT ARRAYS; OPTICAL QUALITY;

ANISOTROPY; FABRICATION; MOLECULAR BEAM EPITAXY; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WIRES; STRAIN; SUBSTRATES; SURFACE TREATMENT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 19944432394     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1823578     Document Type: Article

References (19)

1. Y. Arakawa and H. Sakaki, Appl. Phys. Lett. 40, 939 (1982).
2. H. Sakaki, Jpn. J. Appl. Phys., Part 1 28, L314 (1989).
3. D. S. L. Mui, D. Leonard, L. A. Coldren, and P. M. Petroff, Appl. Phys. Lett. 66, 1620 (1995).
4. A. Konkar, A. Madhukar, and P. Chen, Appl. Phys. Lett. 72, 220 (1998).
5. W. Seifert, N. Carlsson, A. Petersson, L. E. Wernersson, and L. Samuelson, Appl. Phys. Lett. 68, 1684 (1996).
6. Y. Nakamura, O. G. Schmidt, N. Y. Jin-Phillipp, S. Kiravittaya, C. Müller, K. Eberl, H. Gräbeldinger, and H. Schweizer, J. Cryst. Growth 242, 339 (2002).
7. W. Ma, R. Nötzel, A. Trampert, M. Ramsteiner, H. Zhu, H.-P. Schönherr, and K. H. Ploog, Appl. Phys. Lett. 78, 1297 (2001).
8. T. Mano, R. Nötzel, G. J. Hamhuis, T. J. Eijkemans, and J. H. Wolter, Appl. Phys. Lett. 81, 1705 (2002).
9. T. Mano, R. Nötzel, G. J. Hamhuis, T. J. Eijkemans, and J. H. Wolter, J. Appl. Phys. 95, 109 (2004).
10. T. Mano, R. Nötzel, G. J. Hamhuis, T. J. Eijkemans, and J. H. Wolter, J. Cryst. Growth 251, 264 (2003).
11. Yu. I. Mazur, W. Q. Ma, X. Wang, Z. M. Wang, G. J. Salamo, M. Xiao, T. D. Mishima, and M. B. Johnson, Appl. Phys. Lett. 83, 987 (2003).
12. T. Mano, R. Nötzel, G. J. Hamhuis, T. J. Eijkemans, E. Smalbrugge, and J. H. Wolter, Mater. Res. Soc. Symp. Proc. 794, T4.5.1 (2004).
13. D. W. Shaw, J. Electrochem. Soc. 128, 874 (1981).
14. Q. Gong, R. Nötzel, H.-P. Schönherr, and K. H. Ploog, Physica E (Amsterdam) 13, 1176 (2002).
15. T. Mano, R. Nötzel, G. J. Hamhuis, T. J. Eijkemans, and J. H. Wolter, J. Appl. Phys. 92, 4043 (2002).
16. Kasu and N. Kobayashi, J. Cryst. Growth 170, 246 (1997).
17. M. Kitamura, M. Nishioka, J. Oshinowo, and Y. Arakawa, Appl. Phys. Lett. 66, 3663 (1995).
18. H. Yamaguchi and Y. Horikoshi, Jpn. J. Appl. Phys., Part 1 30, 802 (1991).
19. S. Tsukamoto and N. Koguchi, J. Cryst. Growth 201/202, 118 (1999).