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Volumn 80, Issue 24, 2002, Pages 4626-4628

Electrically isolated SiGe quantum dots

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE FLOW; ELECTRICAL ISOLATION; FLOATING-GATES; SILICON LAYER; THIN SILICON LAYERS; ULTRATHIN SILICON;

EID: 79955982420     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1484251     Document Type: Article
Times cited : (8)

References (18)
  • 15
    • 79958182556 scopus 로고    scopus 로고
    • Note
    • The Laplace equation for the full three-dimensional tip-sample geometry was solved using FLEXPDE version 2.22, PDE Solutions Inc., P.O. Box 4217, Antioch, CA 94531.
  • 16
    • 79958200404 scopus 로고    scopus 로고
    • MESP tip, Digital Instruments, 112 Robin Hill Road, Santa Barbara, CA 93117
    • MESP tip, Digital Instruments, 112 Robin Hill Road, Santa Barbara, CA 93117.
  • 18
    • 79958223222 scopus 로고    scopus 로고
    • Note
    • To calculate the order of magnitude of the tip-sample capacitance, the tip is approximated as a sphere with radius of 25 nm at a distance 50 nm from a plane.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.