Stacking of InAs/InP (001) quantum wires studied by in situ stress measurements: Role of inhomogeneous stress fields

Applied Physics Letters

Volumn 84, Issue 23, 2004, Pages 4723-4725

  Fuster, David ^a   González, María Ujué ^a   González, Luisa ^a   González, Yolanda ^a   Ben, Teresa ^b   Ponce, Arturo ^b   Molina, Sergio I ^b  

^a INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

^b UNIVERSITY OF CÁDIZ   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; MOLECULAR BEAM EPITAXY; MONOLAYERS; MORPHOLOGY; OPTOELECTRONIC DEVICES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SELF ASSEMBLY; STRESS ANALYSIS; SWITCHING; TRANSMISSION ELECTRON MICROSCOPY;

OPTICAL MONITORIZATION; REAL TIME STRESS MEASUREMENTS; SPATIAL DISTRIBUTION; STACKING;

SEMICONDUCTOR QUANTUM WIRES;

EID: 3042635866     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1759374     Document Type: Article

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