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Volumn 83, Issue 5, 2003, Pages 987-989

InGaAs/GaAs three-dimensionally-ordered array of quantum dots

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0041375677     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1596712     Document Type: Article
Times cited : (79)

References (17)
  • 16
    • 0041774617 scopus 로고    scopus 로고
    • note
    • As clearly seen from Fig. 1(a) the plane-view TEM image shows a darker contrast between QDs than that of the regions between chains. Generally such contrast difference could be a consequence of several possibilities, i.e., differences in strain field, chemical composition, as well as thickness. Following our PL data, we consider the main reason for darker contrast between QDs comparing with the regions between chains is due to thickness difference.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.