Effect of spacer layer thickness on the optical properties of stacked InAs/InAlAs quantum wires grown on InP (001)

Materials Science and Engineering: B

Volumn 101, Issue 1-3, 2003, Pages 259-261

  Salem, B ^a   Bremond G ^a   Hjiri, M ^b   Hassen, F ^b   Maaref, H ^b   Marty, O ^c   Brault, J ^a   Gendry, M ^a  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^c UNIVERSITÉ LYON 1   (France)

Author keywords

Photoluminescence; Polarization; Quantum wires; Stacked structures

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; MOLECULAR STRUCTURE; PHOTODEGRADATION; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SELF ASSEMBLY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; SPECTRUM ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRONIC COUPLING; STACKED STRUCTURES;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 1642289890     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00691-8     Document Type: Conference Paper

References (18)

1. Leonard D., Krishnamurthy M., Reaves C.M., Denbaars S.P., Petroff P.M. Appl. Phys. Lett. 63:1993;3203.
2. Leon R., Petroff P.M., Leonard D., Fafard S. Science. 267:1966;1995.
3. Ustinov V.M., Zhukov A.E., Egorov A.Yu., Kovsh A.R., Zaitsev S.V., Gordeev N.Yu. Electron. Lett. 34:1998;670.
4. Kirstädter N., Ledentsov N.N., Grundmann M., Bimberg D., Ustinov V.M., Ruvimov S.S., Maximov M.V., Kop'ev P.S., Alferov Zh.I. Electron. Lett. 30:1994;1416.
5. Klopf F., Reithmaier J.P., Forchel A. Appl. Phys. Lett. 77:2000;1419.
6. Chu L., Arzberger M., Zrenner A., Bohm G., Abstreiter G. Appl. Phys. Lett. 75:1999;2247.
7. Xie Q., Madhukar A., Chen P., Kobayashi N.P. Phys. Rev. Lett. 75:1995;2542.
8. Tersoff J., Teichert C., Lagally M.G. Phys. Rev. Lett. 76:1996;1675.
9. Heitz R., Kalburge A., Xie Q., Grundmann M., Chen P., Hoffmann A., Madhukar A., Bimberg D. Phys. Rev. B. 57:1998;9050.
10. Frigeri P., Bosacchi A., Franchi S., Allegri P., Avanzini V. J. Cryst. Growth. 201/202:1999;1136.
11. Petitprez E., Moshegov N.T., Marega J.E., Mazel A., Dorignac D., Fourmeaux R. J. Vac. Sci. Technol. B. 18:2000;1493.
12. Li H., Wu J., Wang Z., Daniels-Race T. Appl. Phys. Lett. 75:1999;1173.
13. Wu J., Xu B., Li H.X. J. Cryst. Growth. 197:1999;95.
14. Li H., Daniels-Race T., Hasan M.-A. J. Vac. Sci. Technol. B. 19:2001;1471.
15. Brault J., Gendry M., Marty O., Pitaval M., Olivares J., Grenet G., Hollinger G. Appl. Surf. Sci. 162-163:2000;584.
16. Brault J., Gendry M., Grenet G., Hollinger G., Olivares J., Salem B., Benyattou T., Bremond G. J. Appl. Phys. 92:2002;506.
17. Solomon G.S., Trezza J.A., Marshall A.F., Harris J.S. Jr. J. Vac. Sci. Technol. B. 14:1996;2208.
18. 110 where I[11̄0] and I[110] are the PL intensities along the two orthogonal directions [11̄0] and [110].