Morphology response to strain field interferences in stacks of highly ordered quantum dot arrays

Physical Review Letters

Volumn 91, Issue 19, 2003, Pages

  Heidemeyer, H ^a   Denker, U ^a   Muller C ^a   Schmidt, O G ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ATOMIC FORCE MICROSCOPY; ETCHING; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; MONOLAYERS; MORPHOLOGY; PHOTOLITHOGRAPHY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUBSTRATES; SURFACES;

HIGHLY ORDERED QUANTUM DOT ARRAYS; PATTERN PERIODICITY; QUANTUM DOT MOLECULES; STRAIN FIELD INTERFERENCES; WET CHEMICAL ETCHING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0347477214     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.91.196103     Document Type: Article

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