Cross-sectional scanning-tunneling microscopy of stacked InAs quantum dots

Applied Physics Letters

Volumn 75, Issue 1, 1999, Pages 106-108

  Eisele, H ^b   Flebbe, O ^b   Kalka, T ^b   Preinesberger, C ^b   Heinrichsdorff, F ^b   Krost, A ^a,b   Bimberg, D ^b   Dahne Prietsch M ^b  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL ORIENTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM COMPOUNDS; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY;

CROSS SECTIONAL SCANNING TUNNELING MICROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032621630     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124290     Document Type: Article

References (17)

1. D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Heterostructures (Wiley, Chichester, 1999).
2. M. Grundmann, J. Christen, N. N. Ledentsov, J. Böhrer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Richter, U. Gösele, J. Heydenreich, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, P. S. Kop'ev, and Zh. I. Alferov, Phys. Rev. Lett. 74, 4043 (1995).
3. F. Heinrichsdorff, M.-H. Mao, N. Kirstaedter, A. Krost, D. Bimberg, A. O. Kosogov, and P. Werner, Appl. Phys. Lett. 71, 22 (1997).
4. D. Bimberg, M. Grundmann, N. N. Ledentsov, S. S. Ruvimov, P. Werner, U. Richter, J. Heydenreich, V. M. Ustinov, P. S. Kop'ev, and Zh. I. Alferov, Thin Solid Films 267, 32 (1995).
5. D. Leonard, M. Krishnamurti, C. M. Reeves, S. P. Denbaars, and P. M. Petroff, Appl. Phys. Lett. 63, 3203 (1993).
6. Q. Xie, A. Madhukar, P. Chen, and N. P. Kobayashi, Phys. Rev. Lett. 75, 2542 (1995).
7. N. N. Ledentsov, V. A. Shchukin, M. Grundmann, N. Kirstaedler, J. Böhrer, O. Schmidt, D. Bimberg, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, P. S. Kop'ev, S. V. Zaitesev, N. Yu. Gordeev, Zh. I. Alferov, A. I. Borovkov, A. O. Kosogov, S. S. Ruvimov, P. Werner, U. Gösele, and J. Heydenreich, Phys. Rev. B 54, 8743 (1996).
8. J. Tersoff, C. Teichert, and M. G. Lagally, Phys. Rev. Lett. 76, 1675 (1996).
9. R. M. Feenstra, Semicond. Sci. Technol. 9, 2197 (1994).
10. M. Pfister, M. B. Johnson, S. F. Alvarado, H. W. M. Salemink, U. Marti, D. Martin, F. Morier-Genoud, and F. K. Reinhart, Appl. Phys. Lett. 67, 1459 (1995).
11. J. Harper, M. Weimer, D. Zhang, C-H. Lin, and S. S. Pei, J. Vac. Sci. Technol. B 16, 1389 (1998).
12. W. Wu, J. R. Tucker, G. S. Solomon, and J. S. Harris, Appl. Phys. Lett. 71, 1083 (1997).
13. B. Legrand, B. Grandidier, J. P. Nys, D. Stiévenard, J. M. Gérard, and V. Thierry-Mieg, Appl. Phys. Lett. 73, 96 (1998).
14. R. M. Feenstra, J. A. Stroscio, J. Tersoff, and A. P. Fein, Phys. Rev. Lett. 58, 1192 (1987).
15. H. Eisele, O. Flebbe, T. Kalka, and M. Dähne-Prietsch, Surf. Interface Anal. 27, 537 (1999).
16. N. Moll, M. Scheffler, and E. Pehlke, Phys. Rev. B 58, 4566 (1998).
17. O. Flebbe, H. Eisele, T. Kalka, F. Heinrichsdorff, A. Krost, D. Bimberg, and M. Dähne-Prietsch, J. Vac. Sci. Technol. B (in press).