Growth of GaN quantum dots on nonpolar A-plane SiC by molecular-beam epitaxy

Physica Status Solidi (B) Basic Research

Volumn 243, Issue 15, 2006, Pages 3968-3971

  Founta, S ^a,b   Rol, F ^a,b   Bellet Amalric, E ^a,b   Sarigiannidou, E ^a,b   Gayral, B ^a,b   Moisson, C ^c   Mariette, H ^a,b   Daudin, B ^a,b  

^a CEA GRENOBLE   (France)

^b UNIV GRENOBLE ALPES   (France)

^c SAVOIE TECHNOLAC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33845799637     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.200671534     Document Type: Article

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