Vertical alignment of laterally ordered InAs and InGaAs quantum dot arrays on patterned (0 0 1) GaAs substrates

Journal of Crystal Growth

Volumn 242, Issue 3-4, 2002, Pages 339-344

  Nakamura, Y ^a   Schmidt, O G ^a   Jin Phillipp, N Y ^a   Kiravittaya, S ^a   Muller C ^a   Eberl, K ^a   Grabeldinger H ^b   Schweizer, H ^b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

Author keywords

A1. Atomic force microscopy; A1. Nanostructure; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; HOLE MOBILITY; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; NUCLEATION; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUBSTRATES; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY;

TWO-DIMENSIONAL HOLE ARRAYS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036644966     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01442-2     Document Type: Article

References (14)