Manipulating the energy levels of semiconductor quantum dots

Physical Review B - Condensed Matter and Materials Physics

Volumn 59, Issue 23, 1999, Pages 15368-15373

  Fafard, S ^a   Wasilewski, Z R ^a   Allen, C ^a   Picard, D ^a   Spanner, M ^a   McCaffrey, J P ^a   Piva, P G ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001337775     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.15368     Document Type: Article

References (46)

1. Y. Arakawa and H. Sakaki, Appl. Phys. Lett.40, 939 (1982);
2. H. Sakaki, Jpn. J. Appl. Phys.28, L314 (1989);
3. H. SakakiSurf. Sci.267, 623 (1992).
4. D. Leonard, M. Krishnamurthy, C M. Reaves, S P. Denbaars, and P M. Petroff, Appl. Phys. Lett.63, 3202 (1993);
5. D. Leonard, S. Fafard, K. Pond, Y H. Zhang, J M. Merz, and P M. Petroff, J. Vac. Sci. Technol. B12, 2516 (1994);
6. D. Leonard, M. Krishnamurthy, S. Fafard, J M. Merz, and P M. Petroff, J. Vac. Sci. Technol. B12, 1063 (1994).
7. S. Fafard, D. Leonard, J M. Merz, and P M. Petroff, Appl. Phys. Lett.65, 1388 (1994).
8. H. Drexler, D. Leonard, W. Hansen, J P. Kotthaus, and P M. Petroff, Phys. Rev. Lett.73, 2252 (1994);
9. K. H. Schmidt, G. Medeiros-Ribeiro, and P M. Petroff, Phys. Rev. B58, 3597 (1998).
10. S. Fafard, R. Leon, D. Leonard, J L. Merz, and P M. Petroff, Phys. Rev. B50, 8086 (1994).
11. J. Y. Marzin, J M. Gérald, A. Izrael, D. Barrier, and G. Bastard, Phys. Rev. Lett.73, 716 (1994).
12. Y. Toda, S. Shinomori, K. Suzuki, and Y. Arakawa, Appl. Phys. Lett.73, 517 (1998).
13. L. Landin, M S. Miller, M E. Pistol, C E. Pryor, and L. Samuelson, Science280, 262 (1998).
14. G. Wang, S. Fafard, D. Leonard, J E. Bowers, J M. Merz, and P M. Petroff, Appl. Phys. Lett.64, 2815 (1994);
15. S. Fafard, S. Raymond, G. Wang, R. Leon, D. Leonard, S. Charbonneau, J L. Merz, P M. Petroff, and J E. Bowers, Surf. Sci.361, 778 (1996).
16. S. Fafard, Photonics Spectra31, 160 (1997);
17. S. Fafard, K. Hinzer, S. Raymond, M. Dion, J. McCaffrey, Y. Feng, and S. Charbonneau, Science274, 1350 (1996).
18. N. N. Ledentsov, V M. Ustinov, V A. Shchukin, P S. Kop’ev, Zh. I. Alferov, and D. Bimberg, Semiconductors32, 343 (1998).
19. R. Mirin, A. Gossard, and J. Bowers, Electron. Lett.32, 1732 (1996).
20. Q. Xie, A. Kalburge, P. Chen, and A. Madhukar, IEEE Photonics Technol. Lett.8, 965 (1996).
21. H. Shoji, IEEE Photonics Technol. Lett.12, 1385 (1995);
22. H. Shoji, Y. Nakata, K. Mukai, Y. Sugiyama, M. Sugawara, N. Yokoyama, and H. Ishikawa, Jpn. J. Appl. Phys., Part 235, L903 (1996);
23. H. ShojiY. NakataK. MukaiY. SugiyamaM. SugawaraN. YokoyamaH. IshikawaElectron. Lett.32, 2023 (1996).
24. H. Saito, K. Nishi, I. Ogura, S. Sugou, and Y. Sugimoto, Appl. Phys. Lett.69, 3140 (1996).
25. K. Kamath, P. Bhattacharya, T. Sosnowski, T. Norris, and J. Phillips, Electron. Lett.32, 1374 (1996).
26. S. Fafard, K. Hinzer, A J. SpringThorpe, Y. Feng, J. McCaffrey, S. Charbonneau, and E M. Griswold, Mater. Sci. Eng.51, 114 (1998).
27. S. Fafard, R. Leon, D. Leonard, J L. Merz, and P M. Petroff, Phys. Rev. B52, 5752 (1995).
28. K. Mukai, N. Ohtsuka, H. Shoji, and M. Sugawara, Appl. Phys. Lett.68, 3013 (1996).
29. Y. Sugiyama, Y. Nakata, T. Futatsugi, M. Sugawara, Y. Awano, and N. Yokoyama, Jpn. J. Appl. Phys.36, L158 (1997).
30. R. Leon, P M. Petroff, D. Leonard, and S. Fafard, Science267, 1966 (1995);
31. R. Leon, S. Fafard, D. Leonard, J L. Merz, and P M. Petroff, Appl. Phys. Lett.67, 521 (1995).
32. S. Fafard, Z. Wasilewski, J. McCaffrey, S. Raymond, and S. Charbonneau, Appl. Phys. Lett.68, 991 (1996);
33. S. Fafard, J. McCaffrey, Y. Feng, C. Ni Allen, H. Marchand, L. Isnard, P. Desjardins, S. Guillon, and R A. Masut, Proc. SPIE3491, 272(1998).
34. Z. R. Wasilewski, S J. Rolfe, and R A. Wilson, J. Cryst. Growth175/176, 1270 (1997).
35. S. Raymond, P. Hawrylak, C. Gould, S. Fafard, A. Sachrajda, M. Potemski, A. Wojs, S. Charbonneau, D. Leonard, P M. Petroff, and J L. Merz, Solid State Commun.101, 883 (1997);
36. Solid State Commun.A. Wojs and P. Hawrylak, 100, 487 (1996);
37. A. Wojs, P. Hawrylak, S. Fafard, and L. Jacak, Phys. Rev. B54, 5604 (1996);
38. S. Raymond, X. Guo, J L. Merz, and S. Fafard, Phys. Rev. B59, 7624(1999).
39. R. Leon, C. Lobo, A. Clark, R. Bozek, A. Wysmolek, A. Kurpiewski, and M. Kaminska, J. Appl. Phys.84, 248 (1998).
40. D. Leonard, K. Pond, and P M. Petroff, Phys. Rev. B50, 11 687 (1994).
41. R. Leon and S. Fafard, Phys. Rev. B58, R1726 (1998).
42. Z. R. Wasilewski, S. Fafard, and J P. McCaffrey, J. Crys. Growth (to be published).
43. R. Leon, S. Fafard, P G. Piva, S. Ruvimov, and Z. Liliental-Weber, Phys. Rev. B58, R4262 (1998).
44. Q. Xie, A. Madhukar, P. Chen, and N P. Kobayashi, Phys. Rev. Lett.75, 2542 (1995).
45. L. Goldstein, F. Glas, J Y. Marzin, M N. Charasse, and G. LeRoux, Appl. Phys. Lett.47, 1099 (1985).
46. G. S. Solomon, J A. Trezza, A F. Marshall, and J J S. Harris, Phys. Rev. Lett.76, 952 (1996).