Narrow photoluminescence line width of closely stacked InAs self-assembled quantum dot structures

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 2 PART A, 1997, Pages

  Sugiyama, Yoshihiro ^a   Nakata, Yoshiaki ^a   Futatsugi, Toshiro ^a   Sugawara, Mitsuru ^a   Awano, Yuji ^a   Yokoyama, Naoki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Excited states; FWHM; InAs; Photoluminescence; Quantum dot

Indexed keywords

PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

FULL WIDTH AT HALF MAXIMUM (FWHM);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0031070257     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l158     Document Type: Article

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