SCOPUS 정보 검색 플랫폼

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 26, Issue 1-4, 2005, Pages 245-251

Strain interactions and defect formation in stacked InGaAs quantum dot and dot-in-well structures

(8) Gutierrez M a Hopkinson, M a Liu, H Y a Ng, J S a Herrera, M b Gonzalez D b Garcia, R b Beanland, R c

a UNIVERSITY OF SHEFFIELD (United Kingdom)

b UNIVERSITY OF CÁDIZ (Spain)

c Bookham Technology plc (United Kingdom)

Author keywords

Defects; Lasers; Quantum dots; Stacking; TEM

Indexed keywords

COALESCENCE; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STRAIN; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

CLADDING LAYERS; STACKED MULTILAYER STRUCTURES; THIN BARRIER LAYERS; THRESHOLD CURRENTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 13444302552 PISSN: 13869477 EISSN: None Source Type: Journal
DOI: 10.1016/j.physe.2004.08.098 Document Type: Conference Paper

Times cited : (13)

References (15)

1
- 0033640392
- X. Huang, A. Stinz, C.P. Hains, G.T. Liu, J. Cheng, and K.J. Malloy Electron. Lett. 36 2000 41
- (2000) Electron. Lett. , vol.36 , pp. 41
- Huang, X.¹ Stinz, A.² Hains, C.P.³ Liu, G.T.⁴ Cheng, J.⁵ Malloy, K.J.⁶

2
- 0042637913
- G. Park, O.B. Shcheekin, S. Csutak, D.L. Huffaker, and D.G. Deppe Appl. Phys. Lett. 75 1999 3267
- (1999) Appl. Phys. Lett. , vol.75 , pp. 3267
- Park, G.¹ Shcheekin, O.B.² Csutak, S.³ Huffaker, D.L.⁴ Deppe, D.G.⁵

3
- 0032689040
- G.T. Liu, A. Stintz, H. Li, K.J. Malloy, and L.F. Lester Electron. Lett. 35 1999 1163
- (1999) Electron. Lett. , vol.35 , pp. 1163
- Liu, G.T.¹ Stintz, A.² Li, H.³ Malloy, K.J.⁴ Lester, L.F.⁵

4
- 34250690965
- A.E. Zhukov, A.R. Kovsh, N.A. Maleev, S.S. Mikhrin, V.M. Ustinov, A.F. Tsatulnikov, M.V. Maximov, B.V. Volovik, D.A. Bedarev, Yu.M. Shernyakov, P.S. Kopev, Zh.I. Alferov, N.N. Ledensov, and D. Bimberg Appl. Phys. Lett. 75 1999 13
- (1999) Appl. Phys. Lett. , vol.75 , pp. 13
- Zhukov, A.E.¹ Kovsh, A.R.² Maleev, N.A.³ Mikhrin, S.S.⁴ Ustinov, V.M.⁵ Tsatulnikov, A.F.⁶ Maximov, M.V.⁷ Volovik, B.V.⁸ Bedarev, D.A.⁹ Shernyakov, Yu.M.¹⁰ Kopev, P.S.¹¹ Alferov, Zh.I.¹² Ledensov, N.N.¹³ Bimberg, D.¹⁴

5
- 0037348036
- H.Y. Liu, M. Hopkinson, C.N. Harrison, M.J. Steer, R. Frith, I.R. Sellers, D.J. Mowbray, and M.S. Skolnick J. Appl. Phys. 93 2003 2931
- (2003) J. Appl. Phys. , vol.93 , pp. 2931
- Liu, H.Y.¹ Hopkinson, M.² Harrison, C.N.³ Steer, M.J.⁴ Frith, R.⁵ Sellers, I.R.⁶ Mowbray, D.J.⁷ Skolnick, M.S.⁸

6
- 0001726439
- J.P.R. David, Y.H. Chen, R. Grey, G. Hill, P.N. Robson, and P. Kightley Appl. Phys. Lett. 67 1995 906
- (1995) Appl. Phys. Lett. , vol.67 , pp. 906
- David, J.P.R.¹ Chen, Y.H.² Grey, R.³ Hill, G.⁴ Robson, P.N.⁵ Kightley, P.⁶

7
- 0014619464
- M.V. Whelan Solid-State Electron. 12 1969 963
- (1969) Solid-State Electron. , vol.12 , pp. 963
- Whelan, M.V.¹

8
- 0036386876
- V.I. Talanin, I.E. Talanin, and D.I. Levinson Cryst. Res. Technol. 37 2002 983
- (2002) Cryst. Res. Technol. , vol.37 , pp. 983
- Talanin, V.I.¹ Talanin, I.E.² Levinson, D.I.³

9
- 4344612111
- H.Y. Liu, I.R. Sellers, M. Gutierrez, K.M. Groom, W.M. Soong, M. Hopkinson, J.P.R. David, R. Beanland, T.J. Badcock, D.J. Mowbray, and M.S. Skolnick J. Appl. Phys. 96 2004 1988
- (2004) J. Appl. Phys. , vol.96 , pp. 1988
- Liu, H.Y.¹ Sellers, I.R.² Gutierrez, M.³ Groom, K.M.⁴ Soong, W.M.⁵ Hopkinson, M.⁶ David, J.P.R.⁷ Beanland, R.⁸ Badcock, T.J.⁹ Mowbray, D.J.¹⁰ Skolnick, M.S.¹¹

10
- 0024701665
- F. Ernst, and P. Pirouz J. Mater. Res. 4 1989 834
- (1989) J. Mater. Res. , vol.4 , pp. 834
- Ernst, F.¹ Pirouz, P.²

11
- 0039899939
- H.L. Tsai, and R.J. Matyi Appl. Phys. Lett. 55 1989 265
- (1989) Appl. Phys. Lett. , vol.55 , pp. 265
- Tsai, H.L.¹ Matyi, R.J.²

12
- 0032487239
- G. Biasiol, and E. Kapon Phys. Rev. Lett. 81 1998 2962
- (1998) Phys. Rev. Lett. , vol.81 , pp. 2962
- Biasiol, G.¹ Kapon, E.²

13
- 0000675294
- H. Saito, K. Nishi, and S. Sugou Appl. Phys. Lett. 74 1999 1224
- (1999) Appl. Phys. Lett. , vol.74 , pp. 1224
- Saito, H.¹ Nishi, K.² Sugou, S.³

14
- 13444278019
- US Patent Number 6,653,166 B 2 Nov. 25
- N.N. Ledentsov, US Patent Number 6,653,166 B 2 Nov. 25, 2003.
- (2003)
- Ledentsov, N.N.¹

15
- 0036752762
- D.S. Sizov, M.V. Maksimov, A.F. Tsatsul'nikov, N.A. Cherdashin, N.V. Kryzhanovskaya, A.B. Zhukov, N.A. Maleev, S.S. Mikhrin, A.P. Vasil'ev, R. Selin, V.M. Ustinov, N.N. Ledentsov, D. Bimberg, and Z.I. Alferov Semicon. 36 2002 1020
- (2002) Semicon. , vol.36 , pp. 1020
- Sizov, D.S.¹ Maksimov, M.V.² Tsatsul'nikov, A.F.³ Cherdashin, N.A.⁴ Kryzhanovskaya, N.V.⁵ Zhukov, A.B.⁶ Maleev, N.A.⁷ Mikhrin, S.S.⁸ Vasil'ev, A.P.⁹ Selin, R.¹⁰ Ustinov, V.M.¹¹ Ledentsov, N.N.¹² Bimberg, D.¹³ Alferov, Z.I.¹⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.