Inhibitions of three dimensional island formation in InAs films grown on GaAs (111)A surface by molecular beam epitaxy

Applied Physics Letters

Volumn 69, Issue 6, 1996, Pages 776-778

  Yamaguchi, H ^a,b   Fahy, M R ^a   Joyce, B A ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001100113     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117888     Document Type: Article

References (24)

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