Lateral arrangement of self-assembled quantum dots in an SiGe/Si superlattice

Journal of Physics D: Applied Physics

Volumn 32, Issue 10 A, 1999, Pages

  Holy V ^a   Stangl, J ^b   Zerlauth, S ^b   Bauer, G ^b   Darowski, N ^c   Lubbert D ^c   Pietsch, U ^c  

^a MASARYK UNIVERSITY   (Czech Republic)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^c UNIVERSITY OF POTSDAM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; EPITAXIAL GROWTH; MONTE CARLO METHODS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR SUPERLATTICES; SURFACES; X RAY DIFFRACTION;

ELASTIC ANISOTROPY; GRAZING INCIDENCE X RAY DIFFRACTION; LATERAL ORDERING;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0032644245     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/32/10A/346     Document Type: Article

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