|
Volumn 85, Issue 8, 2004, Pages 1356-1358
|
Spatial correlation-anticorrelation in strain-driven self-assembled InGaAs quantum dots
|
Author keywords
[No Author keywords available]
|
Indexed keywords
CORRELATION-ANTICORRELATION TRANSITION;
ELASTIC ANISOTROPY;
MIGRATION ENHANCED EPITAXY (MEE);
STRAIN RELAXATION;
ATOMIC FORCE MICROSCOPY;
CORRELATION METHODS;
ELASTICITY;
EPITAXIAL GROWTH;
FAST FOURIER TRANSFORMS;
PARTICLE SIZE ANALYSIS;
RELAXATION PROCESSES;
SCANNING TUNNELING MICROSCOPY;
SELF ASSEMBLY;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTOR GROWTH;
SILICON;
SINGLE CRYSTALS;
STRAIN;
THICKNESS MEASUREMENT;
SEMICONDUCTOR QUANTUM DOTS;
|
EID: 4644311124
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1784526 Document Type: Article |
Times cited : (43)
|
References (14)
|