Three-dimensional self-ordering in an InGaAs/GaAs multilayered quantum dot structure investigated by x-ray diffuse scattering

Journal of Physics D: Applied Physics

Volumn 38, Issue 10 A, 2005, Pages

  Grigoriev, D ^a   Schmidbauer, M ^b   Schafer P ^a   Besedin, S ^a   Mazur, Yu I ^c   Wang, Zh M ^c   Salamo, G J ^c   Kohler R ^a  

^a HUMBOLDT UNIVERSITY   (Germany)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^c UNIVERSITY OF ARKANSAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CORRELATION METHODS; MOLECULAR BEAM EPITAXY; MULTILAYERS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; X RAY SCATTERING;

CRYSTAL ANALYZERS; LATTICE POINTS; SURFACE DENSITIES; X-RAY DIFFUSE SCATTERING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 18744391954     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/38/10A/029     Document Type: Article

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