Influence of growth conditions on the photoluminescence of self-assembled InAs/GaAs quantum dots

Journal of Applied Physics

Volumn 85, Issue 4, 1999, Pages 2355-2362

  Chu, L ^a   Arzberger, M ^a   Bohm G ^a   Abstreiter, G ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001644620     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369549     Document Type: Article

References (26)

1. L. Goldstein, F. Glas, J. Y. Marzin, M. N. Charasse, and G. LeRoux, Appl. Phys. Lett. 47, 1099 (1985).
2. D. Leonard, K. Pond, and P. M. Petroff, Phys. Rev. B 50, 11687 (1994).
3. S. Farad, R. Leon, D. Leonard, J. L. Merz, and P. M. Petroff, Phys. Rev. B 52, 5752 (1995).
4. I. M. Moison, F. Houzay, F. Barthe, L. Leprince, E. Andre, and O. Vatel, Appl. Phys. Lett. 64, 196 (1994).
5. M. Grundmann et al., Phys. Status Solidi B 188, 249 (1995).
6. N. P. Kobayashi, T. R. Ramachandran, P. Chen, and A. Madhukar, Appl. Phys. Lett. 68, 3299 (1996).
7. Y. Arakawa and S. Sakaki, Appl. Phys. Lett. 40, 939 (1982).
8. N. N. Ledentsov et al., Phys. Rev. B 54, 8743 (1996).
9. Q. Xie, A. Kalburge, P. Chen, and A. Madhukar, IEEE Photonics Technol. Lett. 8, 965 (1996).
10. N. Yokoyama, S. Muto, K. Imamura, M. Takatsu, T. Mori, Y. Sugiyama, Y. Sakuma, H. Nakao, and T. Adachihara, Solid-State Electron. 40, 505 (1996).
11. J. J. Finley, M. Skalitz, M. Arzberger, A. Zrenner, G. Böhm, and G. Abstreiter, Appl. Phys. Lett. 73, 2678 (1998).
12. G. Yusa and H. Sakaki, Appl. Phys. Lett. 70, 345 (1997).
13. S. Guha, A. Madhukar, and K. C. Rajkumar, Appl. Phys. Lett. 57, 2110 (1990).
14. J. Drucker, Phys. Rev. B 48, 18203 (1993).
15. M. Grundmann and D. Bimberg, Phys. Bl. 53, 517 (1997).
16. W. A. Jesser and D. Kulmann-Wilsdorff, Phys. Status Solidi 19, 95 (1967).
17. H. Schmidt, G. Medeiros-Ribeiro, U. Kunze, G. Abstreiter, M. Hagn, and P. M. Petroff, J. Appl. Phys. 84, 4268 (1998).
18. G. Medeiros-Ribeiro, A. M. Bratkovski, T. I. Kamins, D. A. A. Ohlberg, and R. S. Williams, Science 279, 353 (1998).
19. T. Ngo, P. M. Petroff, H. Sakaki, and J. L. Merz, Phys. Rev. B 53, 9618 (1996).
20. J. Singh, Physics of Semiconductors and their Heterostructures (McGraw-Hill, New York, 1993).
21. J. Tersoff, C. Teichert, and M. G. Lagally, Phys. Rev. Lett. 76, 1675 (1996).
22. A. Darhuber et al., Appl. Phys. Lett. 70, 955 (1997).
23. Q. Xie, P. Chen, and A. Madhukar, Appl. Phys. Lett. 65, 2051 (1994).
24. M. Grundmann et al., in Proceedings of the Eighth International Confer ence on InP and Related Materials (IEEE, Schwäbisch Gmünd, 1996), p. 738.
25. R. Heitz, A. Kalburge, Q. Xie, M. Grundmann, P. Chen, A. Hoffmann, A. Madhukar, and D. Bimberg, Phys. Rev. B 57, 9050 (1998).
26. A. O. Kosogov et al., Appl. Phys. Lett. 69, 3072 (1996).